公开(公告)号：US11161737B2

公开(公告)日：2021-11-02

申请号：US16773042

申请日：2020-01-27

Applicant: ELBIT SYSTEMS OF AMERICA, LLC

Inventor： Arlynn W. Smith ,  Dan Chilcott

IPC: H01L23/02 ,  B81C1/00 ,  B81C3/00 ,  G02B23/12 ,  B32B3/30 ,  B32B7/12 ,  B32B9/04 ,  B32B17/06 ,  B32B37/12 ,  B32B37/18 ,  B81B7/00 ,  C03C27/04

Abstract: A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.

公开(公告)号：US10584027B2

公开(公告)日：2020-03-10

申请号：US15829314

申请日：2017-12-01

Applicant: ELBIT SYSTEMS OF AMERICA, LLC

Inventor： Arlynn W. Smith ,  Dan Chilcott

IPC: H01L23/02 ,  B81C1/00 ,  B81C3/00 ,  G02B23/12 ,  B32B3/30 ,  B32B7/12 ,  B32B9/04 ,  B32B17/06 ,  B32B37/12 ,  B32B37/18 ,  B81B7/00 ,  C03C27/04

Abstract: A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.

公开(公告)号：US10943758B2

公开(公告)日：2021-03-09

申请号：US16449142

申请日：2019-06-21

Applicant: ELBIT SYSTEMS OF AMERICA, LLC

Inventor： Arlynn W. Smith ,  Dan Chilcott

IPC: H01J21/10 ,  H01J9/02 ,  H01J19/42 ,  H01J19/24

Abstract: A light intensifier includes a semiconductor structure to multiply electrons and block stray particles. A thin gain substrate layer includes an electron multiplier region that is doped to generate a plurality of electrons for each electron that impinges on an input surface of the gain substrate layer and blocking structures that are doped to direct the plurality of electrons towards emission areas of an emission surface of the gain substrate layer. Respective ribs of a first plurality of ribs on the input surface of the gain substrate layer are vertically aligned with respective blocking structures, and respective blocking structures are vertically aligned with respective ribs of a second plurality of ribs at the emission surface. This alignment directs electrons along a path through the gain substrate layer to reduce noise. The support ribs provide mechanical strength to the gain substrate layer, improving robustness of the light intensifier while minimizing noise.