公开(公告)号：US20230065768A1

公开(公告)日：2023-03-02

申请号：US17507796

申请日：2021-10-21

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Dong Woo PARK ,  Kyung Hyun PARK ,  Dong-Young KIM ,  Mugeon KIM ,  Jun-Hwan SHIN ,  Eui Su LEE ,  IL MIN LEE ,  Da Hye CHOI

IPC: H01L31/02 ,  H01L23/66 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/09 ,  H01L31/18

Abstract: Disclosed is a method for fabricating a terahertz device, the method including providing a substrate, doping a conductive impurity on an upper surface of the substrate to form an electrode layer, patterning the electrode layer to form antenna electrodes, and forming a photomixer between the antenna electrodes.