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公开(公告)号：US20220179359A1
公开(公告)日：2022-06-09
申请号：US17523197
申请日：2021-11-10
Inventor： Jae-Eun PI , Yong Hae KIM , Jong-Heon YANG , Chul Woong JOO , Chi-Sun HWANG , HA KYUN LEE , Seung Youl KANG , Gi Heon KIM , Joo Yeon KIM , Hee-ok KIM , Jeho NA , Jaehyun MOON , Won Jae LEE , Seong-Mok CHO , Ji Hun CHOI
Abstract: Disclosed is an apparatus of analyzing a depth of a holographic image according to the present disclosure, which includes an acquisition unit that acquires a hologram, a restoration unit that restores a three-dimensional holographic image by irradiating the hologram with a light source, an image sensing unit that senses a depth information image of the restored holographic image, and an analysis display unit that analyzes a depth quality of the holographic image, based on the sensed depth information image, and the image sensing unit uses a lensless type of photosensor.
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公开(公告)号：US20230083225A1
公开(公告)日：2023-03-16
申请号：US17943528
申请日：2022-09-13
Inventor： Jong-Heon YANG , Seung Youl KANG , Yong Hae KIM , Hee-ok KIM , Jeho NA , Jaehyun MOON , Chan Woo PARK , Himchan OH , Seong-Mok CHO , Sung Haeng CHO , Ji Hun CHOI , Jae-Eun PI , Chi-Sun HWANG
IPC: H01L27/32 , G09G3/3266 , G09G3/3225
Abstract: Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.
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公开(公告)号：US20250098218A1
公开(公告)日：2025-03-20
申请号：US18762381
申请日：2024-07-02
Inventor： Jae-Eun PI , Seung Youl KANG , Yong Hae KIM , Joo Yeon KIM , Hee-ok KIM , Jaehyun MOON , Jong-Heon YANG , Himchan OH , Seong-Mok CHO , Ji Hun CHOI , Chi-Sun HWANG
IPC: H01L29/417 , G02F1/1362 , G02F1/1368 , H01L27/12 , H01L29/786
Abstract: A thin film transistor includes a first gate electrode on a substrate, a gate insulating film on the first gate electrode, a first active layer on the gate insulating film, a drain electrode on one side of the first active layer, a sidewall spacer on a side wall of the drain electrode, and a first source electrode provided on the other side of the first active layer and a sidewall of the sidewall spacer.
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公开(公告)号：US20230091070A1
公开(公告)日：2023-03-23
申请号：US17889204
申请日：2022-08-16
Inventor： Ji Hun CHOI , Chan Woo PARK , Ji-Young OH , Seung Youl KANG , Yong Hae KIM , Hee-ok KIM , Jeho NA , Jaehyun MOON , Jong-Heon YANG , Himchan OH , Seong-Mok CHO , Sung Haeng CHO , Jae-Eun PI , Chi-Sun HWANG
IPC: H01B7/06 , H01B3/30 , H01B13/008 , H05K7/06
Abstract: Provided are stretchable electronics and a method for manufacturing the same. The stretchable electronics may include a substrate, a plurality of electronic elements disposed to be spaced apart from each other on the substrate, and a wire structure disposed on the substrate to connect the plurality of electronic elements to each other. The wire structure may include an insulator extending from one of the electronic elements to the other of the adjacent electronic elements and a metal wire configured to cover a top surface and side surfaces of the insulator. The insulator may include at least one bent part in a plan view.
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