公开(公告)号：US11239353B2

公开(公告)日：2022-02-01

申请号：US16670412

申请日：2019-10-31

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Sun Jin Yun ,  Kwang Hoon Jung ,  So Hyun Kim ,  Jung Wook Lim

IPC分类号： H01L31/00 ,  H01L29/76 ,  H01L29/06 ,  H01L29/786 ,  H01L21/02 ,  H01L29/04

摘要： Provided is a method of manufacturing a semiconductor device. The method includes providing a substrate, forming uneven portions in a region of the substrate in which an electrode is to be formed, forming a precursor film formed of a two-dimensional material on the substrate on which the uneven portions are formed, forming a metal chalcogen film by performing a chalcogenation process on the formed precursor film, and forming the electrode on the formed metal chalcogen film.