公开(公告)号：US10811254B2

公开(公告)日：2020-10-20

申请号：US16047871

申请日：2018-07-27

申请人： Electronics and Telecommunications Research Institute

发明人： Sun Jin Yun ,  JungWook Lim ,  Kwang Hoon Jung ,  Hyun Jun Chai

IPC分类号： H01L21/02 ,  C23C16/56 ,  H01L21/56 ,  C23C16/30 ,  C23C16/455 ,  H01L29/24 ,  C23C14/18 ,  H01L29/66 ,  C23C14/58 ,  C23C14/06 ,  H01L29/786 ,  H01L29/778

摘要： Provided is a method for fabricating high-uniformity and high-quality metal chalcogenide thin films. The method for fabricating metal chalcogenide thin films may include forming a metal precursor thin film including a metal thin film and a chalcogen thin film disposed on the upper surface or lower surface of the metal thin film; and performing a chalcogenization process for providing a chalcogen source on the metal precursor thin film to form a first metal chalcogenide thin film.

公开(公告)号：US11239353B2

公开(公告)日：2022-02-01

申请号：US16670412

申请日：2019-10-31

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Sun Jin Yun ,  Kwang Hoon Jung ,  So Hyun Kim ,  Jung Wook Lim

IPC分类号： H01L31/00 ,  H01L29/76 ,  H01L29/06 ,  H01L29/786 ,  H01L21/02 ,  H01L29/04

摘要： Provided is a method of manufacturing a semiconductor device. The method includes providing a substrate, forming uneven portions in a region of the substrate in which an electrode is to be formed, forming a precursor film formed of a two-dimensional material on the substrate on which the uneven portions are formed, forming a metal chalcogen film by performing a chalcogenation process on the formed precursor film, and forming the electrode on the formed metal chalcogen film.

公开(公告)号：US10483300B2

公开(公告)日：2019-11-19

申请号：US15993765

申请日：2018-05-31

申请人： Electronics and Telecommunications Research Institute

发明人： JungWook Lim ,  Sun Jin Yun ,  Tae Yoon Kim ,  Jeho Na ,  Seong Hyun Lee ,  Kwang Hoon Jung

IPC分类号： H01L27/144 ,  H01L31/113 ,  H01L31/0336 ,  G11C13/04 ,  H01L31/18 ,  G11C16/04 ,  G11C16/18 ,  H01L31/0296

摘要： Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.

公开(公告)号：US20180350852A1

公开(公告)日：2018-12-06

申请号：US15993765

申请日：2018-05-31

申请人： Electronics and Telecommunications Research Institute

发明人： JungWook Lim ,  Sun Jin Yun ,  Tae Yoon Kim ,  Jeho Na ,  Seong Hyun Lee ,  Kwang Hoon Jung

IPC分类号： H01L27/144 ,  H01L31/113 ,  H01L31/18 ,  H01L31/0336 ,  G11C13/04

CPC分类号： H01L27/1443 ,  G11C13/047 ,  G11C16/0466 ,  G11C16/18 ,  H01L27/1446 ,  H01L31/0296 ,  H01L31/0336 ,  H01L31/1136 ,  H01L31/18

摘要： Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.