Thin film transistor comprising oxide semiconductor
    1.
    发明授权
    Thin film transistor comprising oxide semiconductor 有权
    薄膜晶体管包括氧化物半导体

    公开(公告)号:US08809857B2

    公开(公告)日:2014-08-19

    申请号:US14028617

    申请日:2013-09-17

    摘要: Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature.

    摘要翻译: 提供了一种薄膜晶体管及其制造方法,其中与含有硼或铝的氮化物结合的氧化物半导体被施加到沟道层。 其中与含有硼或铝的氮化物结合的氧化物半导体施加到沟道层的薄膜晶体管显示出显着改善的迁移率和在高温下增加的稳定性。

    Method for manufacturing touch screen panel and touch screen panel
    2.
    发明授权
    Method for manufacturing touch screen panel and touch screen panel 有权
    触摸屏面板和触摸屏面板制造方法

    公开(公告)号:US09542052B2

    公开(公告)日:2017-01-10

    申请号:US14602303

    申请日:2015-01-22

    IPC分类号: G06F3/045 G06F3/044

    摘要: Provided herein is an electrostatic capacitive type window integrated touch screen panel and a method for manufacturing a touch screen panel thereof, the method comprising: forming an oxide metal oxide (OMO) hybrid electrode on a strengthened substrate; and etching the OMO hybrid electrode and forming a pattern, and forming a pattern insertion layer on the pattern, wherein the OMO hybrid electrode is formed by depositing a bottom-layer, metal-layer and top-layer on top of the strengthened substrate, and the pattern insertion layer is formed based on an oxide having a refractive index of a certain range.

    摘要翻译: 本文提供了一种静电电容式窗口集成触摸屏面板及其触摸屏面板的制造方法,该方法包括:在强化衬底上形成氧化物金属氧化物(OMO)混合电极; 蚀刻OMO混合电极并形成图案,并在图案上形成图案插入层,其中OMO复合电极通过在加强基板的顶部上沉积底层,金属层和顶层而形成,以及 图案插入层基于具有一定范围的折射率的氧化物形成。