Abstract:
Disclosed are a system for and a method of manufacturing a three-dimensional (3D) structure. The method may include injecting a fluid with a first pressure toward a surface of a first output layer to form a softening layer in the first output layer, injecting the fluid with a second pressure toward the softening layer to form an uneven structure in the softening layer, the second pressure being higher than the first pressure, and forming a second output layer on the softening layer with the uneven structure.
Abstract:
Provided herein is an electrostatic capacitive type window integrated touch screen panel and a method for manufacturing a touch screen panel thereof, the method comprising: forming an oxide metal oxide (OMO) hybrid electrode on a strengthened substrate; and etching the OMO hybrid electrode and forming a pattern, and forming a pattern insertion layer on the pattern, wherein the OMO hybrid electrode is formed by depositing a bottom-layer, metal-layer and top-layer on top of the strengthened substrate, and the pattern insertion layer is formed based on an oxide having a refractive index of a certain range.
Abstract:
Provided are touch screen panels with improved transmittance and methods of fabricating the same. the method may include preparing a substrate including a cell region and an interconnection region provided around the cell region, sequentially forming a first buffer layer and a second buffer layer on the substrate, the second buffer layer having a refractive index less than that of the first buffer layer, and forming a transparent electrode on the second buffer layer. The second buffer layer is formed of a SiOC material.
Abstract:
Provided are touch screen panels with improved transmittance and methods of fabricating the same. the method may include preparing a substrate including a cell region and an interconnection region provided around the cell region, sequentially forming a first buffer layer and a second buffer layer on the substrate, the second buffer layer having a refractive index less than that of the first buffer layer, and forming a transparent electrode on the second buffer layer. The second buffer layer is formed of a SiOC material.