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公开(公告)号：US3571673A
公开(公告)日：1971-03-23
申请号：US3571673D
申请日：1968-08-22
Applicant: ENERGY CONVERSION DEVICES INC
Inventor： OVSHINSKY STANFORD R , FLEMING GORDON R
CPC classification number: H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/148 , H01L45/1625
Abstract: A current controlling device for an electrical circuit including a semiconductor material and electrodes in low electrical resistance contact therewith, wherein said semiconductor material has a high electrical resistance to provide a blocking condition for substantially blocking current therethrough, wherein the high electrical resistance is substantially instantaneously decreased to a low electrical resistance in response to a voltage above a threshold voltage value, wherein the semiconductor material in the low electrical resistance conducting condition has a voltage drop which is a fraction of the voltage drop in the high electrical resistance blocking condition near the threshold voltage value, and wherein the semiconductor material is a multielement nonchalcogenide material including as essential ingredients arsenic or phosphorous and silicon, germanium, gallium, boron or aluminum. The material may also include minor additions, such as, cadmium or zinc. Particularly good results have been obtained with a binary system of arsenic and silicon.
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公开(公告)号：US3571669A
公开(公告)日：1971-03-23
申请号：US3571669D
申请日：1968-03-04
Applicant: ENERGY CONVERSION DEVICES INC
Inventor： FLEMING GORDON R
CPC classification number: H01L45/04 , H01L45/1233 , H01L45/142 , H01L45/1625
Abstract: A current-controlling device for an electrical circuit including a semiconductor material and electrodes in contact therewith, wherein the semiconductor material has a high electrical resistance, wherein the high electrical resistance is substantially instantaneously decreased to a low electrical resistance in response to a voltage above a threshold voltage value, wherein the low electrical resistance is immediately returned to the high electrical resistance in response to a decrease in current below a minimum current holding value, and wherein the semiconductor material consists essentially of sulfur and a transition metal, as for example, vanadium.
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Patent Agency Ranking
公开(公告)号：US3588639A
公开(公告)日：1971-06-28
申请号：US3588639D
申请日：1969-05-27
Applicant: ENERGY CONVERSION DEVICES INC
Inventor： FLEMING GORDON R , OVSHINSKY STANFORD R
CPC classification number: H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/146 , H01L45/1625
Abstract: A CURRENT CONTROLLING DEVICE FOR AN ELECTRICAL CIRCUIT INCLUDING A SEMICONDUCTOR ELEMENT AND ELECTRODES IN LOW ELECTRICALA RESISTANCE CONTACT THEREWITH, WHEREIN SAID SEMICONDUCTOR ELEMENT HAS A THRESHOLD VOLTAGE VALUE AND A HIGH ELECTRICAL RESISTANCE TO PROVIDE A BLOCKING CONDITION FOR SUBSTANTIALLY BLOCKING CURRENT THERETHROUGH, WHEREIN THE HIGH ELECTRICAL RESISTANCE IS SUBSTANTIALLY INSTANTANEOUSLY DECREASED TO A LOW RESISTANCE IN REPSONSE TO A VOLTAGE ABOVE SAID THRESHOLD VOLTAGE VALUE TO PROVIDE A CONDUCTING CONDITION FOR SUBSTANTIALLY CONDUCTING CURRENT THERETHROUGH, AND WHEREIN THE SEMICONDUCTOR ELEMENT BETWEEN THE ELECTRDES COMPRISES A THIN SUBSTANTIALLY AMORPHOUS FILM OF SUBSTANTIALLY VO2 HAVING HIGH ELECTRICAL RESISTANCE.
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4.发明授权
公开(公告)号：US3899558A
公开(公告)日：1975-08-12
申请号：US7015570
申请日：1970-09-08
Applicant: ENERGY CONVERSION DEVICES INC
Inventor： FLEMING GORDON R , OVSHINSKY STANFORD R
CPC classification number: H01L45/04 , H01L45/146 , H01L45/1608
Abstract: A current controlling device for an electrical circuit including a semiconductor element and electrodes in low electrical resistance contact therewith, wherein said semiconductor element has a threshold voltage value and a high electrical resistance to provide a blocking condition for substantially blocking current therethrough, wherein the high electrical resistance is substantially instantaneously decreased to a low resistance in response to a voltage above said threshold voltage value to provide a conducting condition for substantially conducting current therethrough, wherein the semiconductor element comprises high electrical resistance refractory powder particles substantially individually coated with a thin solid coating of substantially VO2, wherein the high electrical resistance refractory powder particles may comprise SnO2, SiO2, Al2O3, ZrO2 or TiO2 or the like, wherein the thin substantially VO2 coating on the particles is obtained from V2O5 and/or V2O3 in the formation thereof by several methods described herein, wherein the devices may be of the non-memory type or the memory type, and wherein the devices may have an intermediate or partial conducting condition.
Abstract translation: 一种用于电路的电流控制装置，包括半导体元件和与其电阻接触的电极，其中所述半导体元件具有阈值电压值和高电阻以提供用于基本上阻挡电流的阻挡条件，其中所述高电 响应于高于所述阈值电压值的电压，电阻基本上立即降低到低电阻以提供用于基本上导通电流的导电条件，其中半导体元件包括基本上分别涂覆有薄的固体涂层的高电阻难熔粉末颗粒 其中高电阻难熔粉末颗粒可以包括SnO 2，SiO 2，Al 2 O 3，ZrO 2或TiO 2等，其中颗粒上的基本上薄的VO2涂层是从V 2 O 5和/或V 2 O 3在该地层中获得的 通过本文描述的几种方法，其中所述设备可以是非存储器类型或存储器类型，并且其中所述器件可以具有中间或部分导电条件。
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5.发明授权Information display panel using amorphous semiconductor layer adjacent optical display material 失效信息显示面板使用非晶半导体层相邻光学显示材料
公开(公告)号：US3659149A
公开(公告)日：1972-04-25
申请号：US3659149D
申请日：1970-11-18
Applicant: ENERGY CONVERSION DEVICES INC
Inventor： FLEMING GORDON R
CPC classification number: G09G3/30 , G09G2300/0885 , G09G2360/148
Abstract: An amorphous semiconductor layer is employed in the display panel disclosed herein. An electroluminescent layer is sandwiched between the amorphous semiconductor layer and a set of parallel spaced conductors. An AC signal is applied to the conductors so that adjacent conductors are 180* out of phase. A field is established between adjacent conductors which passes up through the electroluminescent layer across the layer of amorphous semiconductor material and back down through another portion of the electroluminescent layer. If the amorphous semiconductor material is in a low resistance state the field across the electroluminescent material is made sufficiently strong to cause it to emit light. By switching the amorphous semiconductor material at selected regions, the electroluminescent material emits light in accordance with a desired pattern of information to be displayed. Systems are disclosed for switching the amorphous material in a variety of ways, and techniques for varying the intensity and contrast of the display are also disclosed.
Abstract translation: 在本文公开的显示面板中采用非晶半导体层。 电致发光层被夹在非晶半导体层和一组平行隔开的导体之间。 对导体施加交流信号，使相邻的导体相位相差180度。 在相邻的导体之间建立一个场，该相邻的导体在非晶半导体材料层之间穿过电致发光层并向下通过电致发光层的另一部分。 如果非晶半导体材料处于低电阻状态，则穿过电致发光材料的场被制成足够强以使其发光。 通过在所选择的区域切换非晶半导体材料，电致发光材料根据要显示的所需信息图案发光。 公开了以各种方式切换非晶材料的系统，并且还公开了用于改变显示器的强度和对比度的技术。
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公开(公告)号：US3647664A
公开(公告)日：1972-03-07
申请号：US3647664D
申请日：1970-09-08
Applicant: ENERGY CONVERSION DEVICES INC
Inventor： FLEMING GORDON R , OVSHINSKY STANFORD R
CPC classification number: H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/146 , H01L45/1625
Abstract: A CURRENT CONTROLLING DEVICE FOR AN ELECTRICAL CIRCUIT INCLUDING A SEMICONDUCTOR ELEMENT AND ELECTRODES IN LOW ELECTRICAL RESISTANCE CONTACT THEREWITH, WHEREIN SAID SEMICONDUCTOR ELEMENT HAS A THRESHOLD VOLTAGE VALUE AND A HIGH ELECTRICAL RESISTANCE TO PROVIDE A BLOCKING CONDITION FOR SUBSTANTIALLY BLOCKING CURRENT THERETHROUGH, WHEREIN THE HIGH ELECTRICAL RESISTANCE IN RESPONSE TO A VOLTAGE ABOVE SAID THRESHOLD VOLTAGE VALUE TO PROVIDE A CONDUCTING CONDITION FOR SUBSTANTIALLY CONDUCTING CURRENT THERETHROUGH, AND WHEREIN THE SEMICONDUCTOR ELEMENT BETWEEN THE ELECTRODES COMPRISES A THIN SUBSTANTIALLY AMORPHOUS FILM OF SUBSTANTIALLY VO2 HAVING ELECTRICAL RESISTANCE.
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公开(公告)号：US3588638A
公开(公告)日：1971-06-28
申请号：US3588638D
申请日：1969-05-27
Applicant: ENERGY CONVERSION DEVICES INC , GORDON R FLEMING , STANFORD R OVSHINSKY
Inventor： FLEMING GORDON R , OVSHINSKY STANFORD R
CPC classification number: H01L45/04 , H01L45/146 , H01L45/1608
Abstract: A CURRENT CONTROLLING DEVICE FOR AN ELECTRICAL CIRCUIT INCLUDING A SEMICONDUCTOR ELEMENT AND ELECTRODES IN LOW ELECTRICAL RESISTANCE CONTACT THEREWITH, WHEREIN SAID SEMICONDUCTOR ELEMENT HAS A TREASHOLD VOLTAGE VALUE AND A HIGH ELECTRICAL RESISTANCE TO PROVIDE A BLOCKING CONDITION FOR SUBSTANTIALLY BLOCKING CURRENT THERETHORUGH, WHEREIN THE HIGH ELECTRICAL RESISTANCE IS SUBSTANTIALLY INSTANTANEOUSLY DECREASED TO A LOW RESISTANCE IN RESPONSE TO A VOLTAGE ABOVE SAID THRESHOLD VOLTAGE VALUE TO PROVIDE A CONDUCTING CONDITION FOR SUBSTANTIALLY CONDUCTING CURRENT THERETHROUGH, WHREIN THE SEMICONDUCTOR ELEMENT COMPRISES HIGH ELECTRICAL RESISTANCE REFRACTORY POWDER PARTICLES SUBSTANTIALLY INDIVIDUALLY COATED WITH A THIN SOLID COATING OF SUBSTANTIALLY VO2, WHEREIN THE HIGH ELECTRICAL RESISTANCE REFRACTORY POWDER PARTICLES MAY COMPRISE SNO2, SIO2, AL2O3, ZRO2, RO TIO2 OR THE LIKE, WHEREIN THE THIN SUBSTAINTIALLY VO2 COATING ON THE PARTICLES IS OBTAINED FROM V2O3 AND/OR V2O3 IN THE FORMATION THEREOF BY SEVERAL METHODS DESCRIBED HEREIN, WHEREIN THE DEVICES MAY BE OF THE NONMEMORY TYPE OR THE MEMROYTYPE, AND WHEREIN THE DEVICES MAY HAVE AN INTERMEDIATE OR PARTIAL CONDUCTING CONDITION.
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