公开(公告)号：US20230383185A1

公开(公告)日：2023-11-30

申请号：US18202007

申请日：2023-05-25

Applicant: ENTEGRIS, INC.

Inventor： JeongYeol Yang ,  Hyungpyo Hong ,  Juhee Yeo ,  SeongJin Hong ,  WonLae Kim

IPC: C09K13/08 ,  C09K15/20

CPC classification number: C09K13/08 ,  C09K15/20

Abstract: Compositions and methods for selectively etching titanium nitride, cobalt, or a combination thereof. The compositions and methods generally leave molybdenum and other materials present unaffected by the process. The process can achieve a high etching rate, and can provide uniform recess top and bottom layers in patterns.