公开(公告)号：US20230088079A1

公开(公告)日：2023-03-23

申请号：US17860177

申请日：2022-07-08

Applicant: ENTEGRIS, INC.

Inventor： SangJin Lee ,  MinSeok Ryu ,  Sangbum Han ,  SeongCheol Kim ,  YoonHae Kim ,  KieJin Park ,  YeRim Yeon ,  Sungsil Cho ,  HwanSoo Kim ,  JoongKi CHOI

IPC: C07F7/10 ,  H01L21/02 ,  C23C16/455

Abstract: Provided are certain silyl amine compounds useful as precursors in the vapor deposition of silicon-containing materials onto the surfaces of microelectronic devices. Such precursors can be utilized with optional co-reactants to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon carbonitride (SiCN), and silicon carbide.