公开(公告)号：US20240379320A1

公开(公告)日：2024-11-14

申请号：US18657535

申请日：2024-05-07

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Joseph R. Despres ,  Nicholas Harris ,  Edward E. Jones

IPC: H01J37/08 ,  H01J37/317

Abstract: An ion implantation system and related methods are provided herein. An ion implantation system comprises a gas supply assembly comprising at least one gas supply vessel in fluid communication with an arc chamber. The gas supply assembly is configured to supply a gas component comprising at least one of GeF4, GeH4, H2, a fluorine-containing gas, or any combination thereof. When the gas component is supplied from the at least one gas supply vessel to the arc chamber for implantation into a substrate, a beam current of Ge ions generated from the gas component is greater than a beam current of Ge ions generated from a control gas component.