公开(公告)号：US10134947B2

公开(公告)日：2018-11-20

申请号：US15872202

申请日：2018-01-16

申请人： EPISTAR CORPORATION

发明人： Chia Chen Tsai ,  Chen Ou ,  Chi Ling Lee ,  Chi Shiang Hsu

IPC分类号： H01L23/02 ,  H01L33/00 ,  H01L33/62 ,  H01L33/02 ,  H01L33/22 ,  H01L33/20 ,  H01L21/784 ,  H01L21/78

摘要： A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein a convex region or a concave region is formed by the first deteriorated surface, the first crack surface and the second crack surface, or the second deteriorated surface, the first crack surface and the third crack surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.

公开(公告)号：US10418513B2

公开(公告)日：2019-09-17

申请号：US16143573

申请日：2018-09-27

申请人： EPISTAR CORPORATION

发明人： Chia Chen Tsai ,  Chen Ou ,  Chi Ling Lee ,  Chi Shiang Hsu

IPC分类号： H01L33/02 ,  H01L33/00 ,  H01L33/62 ,  H01L33/22 ,  H01L33/20 ,  H01L21/784 ,  H01L21/78

摘要： A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first crack surface is inclined to the first deteriorated surface or the second deteriorated surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.

公开(公告)号：US09893231B2

公开(公告)日：2018-02-13

申请号：US15475817

申请日：2017-03-31

申请人： EPISTAR CORPORATION

发明人： Chia Chen Tsai ,  Chen Ou ,  Chi Ling Lee ,  Chi Shiang Hsu

IPC分类号： H01L33/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/62 ,  H01L33/22

CPC分类号： H01L33/0095 ,  H01L21/78 ,  H01L21/784 ,  H01L33/02 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22 ,  H01L33/62

摘要： A compound semiconductor device comprises a substrate, comprising a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface comprises a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first and second deteriorated surfaces are rougher than at least one of the first crack surface, the second crack surface and the third crack surface; and wherein the second crack surface is about perpendicular to the top surface, and the third crack surface is about perpendicular to the bottom surface.