公开(公告)号：US20230253401A1

公开(公告)日：2023-08-10

申请号：US18003486

申请日：2021-06-15

Applicant: EXAGAN SAS

Inventor： Robin JUNG

IPC: H01L27/088 ,  H01L23/48 ,  H01L23/482 ,  H01L23/00 ,  H01L23/498 ,  H01L23/522

CPC classification number: H01L27/088 ,  H01L23/481 ,  H01L23/482 ,  H01L24/29 ,  H01L24/32 ,  H01L23/498 ,  H01L23/5226 ,  H01L2224/29139 ,  H01L2224/32227

Abstract: The invention concerns a field-effect transistor (100) having an interdigited structure and comprising:



a plurality of elementary transistor cells (50) arranged in parallel, each elementary cell comprising a source electrode (1), a drain electrode (3), and a gate electrode (2) interposed between the source and drain electrodes,
a source terminal (10) and a drain terminal (30) respectively connected to the source electrodes (1) and to the drain electrodes (3) of the elementary cells (50),
a gate terminal (20) connected to the gate electrodes (2) of the elementary cells.




The field-effect transistor (100) only comprises vertical conductive vias to connect the gate electrodes to the gate terminal, and the gate terminal (20) is arranged vertically in line with all or part of the elementary cells (50).