公开(公告)号：US20070158714A1

公开(公告)日：2007-07-12

申请号：US11164382

申请日：2005-11-21

申请人： Ebenezer Eshun ,  Jessie Abbotts ,  Daniel Colello ,  Douglas Coolbaugh ,  Zhong-Xiang He ,  Matthew Moon ,  Charles Musante ,  Robert Rassel

发明人： Ebenezer Eshun ,  Jessie Abbotts ,  Daniel Colello ,  Douglas Coolbaugh ,  Zhong-Xiang He ,  Matthew Moon ,  Charles Musante ,  Robert Rassel

IPC分类号： H01L29/94

CPC分类号： H01L28/60 ,  H01L21/76895

摘要： A MIM capacitor technique is described wherein bottom plates (electrodes) are composed of gate conductor material, and are formed in the same layer, in the same way, using the same masking and processing steps as transistor gates. The top plates (electrodes) are formed using a simple single-mask, single-damascene process. Electrical connections to both electrodes of the MIM capacitor are made via conventional BEOL metallization, requiring no additional dedicated process steps. The bottom plates (formed of gate conductor material) of the MIM capacitors overlie STI regions formed at the same time as STI regions between transistors. Method and apparatus are described.

摘要翻译： 描述了MIM电容器技术，其中底板（电极）由栅极导体材料构成，并且以相同的方式使用与晶体管栅极相同的掩模和处理步骤形成在相同的层中。 顶板（电极）使用简单的单掩模，单镶嵌工艺形成。 与MIM电容器的两个电极的电连接通过常规BEOL金属化制成，不需要额外的专用工艺步骤。 MIM电容器的底板（由栅极导体材料形成）覆盖与晶体管之间的STI区域同时形成的STI区域。 描述了方法和装置。