公开(公告)号：US06828650B2

公开(公告)日：2004-12-07

申请号：US10160940

申请日：2002-05-31

申请人： Edouard de Frésart ,  Patrice Parris ,  Richard J De Souza ,  Jennifer H. Morrison ,  Moaniss Zitouni ,  Xin Lin

发明人： Edouard de Frésart ,  Patrice Parris ,  Richard J De Souza ,  Jennifer H. Morrison ,  Moaniss Zitouni ,  Xin Lin

IPC分类号： H01L2900

CPC分类号： H01L29/0692 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/1004 ,  H01L29/7322

摘要： A Bipolar Junction Transistor (BJT) that reduces the variation in the current gain through the use of a trench pullback structure. The trench pullback structure is comprised of a trench and an active region. The trench reduces recombination in the emitter-base region through increasing the distance charge carriers must travel between the emitter and the base. The trench also reduces recombination by reducing the amount of interfacial traps that the electrons injected from the emitter are exposed to. Further, the trench is pulled back from the emitter allowing an active region where electrons injected from a sidewall of the emitter can contribute to the overall injected emitter current. This structure offers the same current capability and current gain as a device without the trench between the emitter and the base while reducing the current gain variation.

摘要翻译： 双极结晶体管（BJT），通过使用沟槽回拉结构减少电流增益的变化。 沟槽回拉结构由沟槽和有源区组成。 沟槽通过增加载流子必须在发射极和基极之间行进的距离来减小发射极 - 基极区域中的复合。 沟槽还通过减少从发射体注入的电子暴露的界面陷阱的量来减少重组。 此外，从发射极拉回沟槽，允许从发射极的侧壁注入的电子能够有助于整个注入的发射极电流的有源区。 该结构提供与发射极和基极之间没有沟槽的器件相同的电流能力和电流增益，同时减小电流增益变化。