专利检索 ap:("Edward P. Barth" OR "Glenn A. Biery" OR "Jeffrey P. Gambino" OR "Thomas H. Ivers" OR "Hyun K. Lee" OR "Ernest N. Levine" OR "Ann McDonald" OR "Anthony K. Stamper") AND inv:"Edward P. Barth" 第 1 页

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发明授权
Dual damascene interconnect structure using low stress fluorosilicate insulator with copper conductors 失效
标题翻译：双重镶嵌互连结构，采用铜导体低应力氟硅酸盐绝缘体

公开(公告)号：US07034400B2

公开(公告)日：2006-04-25

申请号：US10659778

申请日：2003-09-10

申请人： Edward P. Barth , Glenn A. Biery , Jeffrey P. Gambino , Thomas H. Ivers , Hyun K. Lee , Ernest N. Levine , Ann McDonald , Anthony K. Stamper

发明人： Edward P. Barth , Glenn A. Biery , Jeffrey P. Gambino , Thomas H. Ivers , Hyun K. Lee , Ernest N. Levine , Ann McDonald , Anthony K. Stamper

IPC分类号： H01L23/48

CPC分类号： H01L21/76807 , H01L21/76801 , H01L2221/1036

摘要： A metallization insulating structure, having a substrate; a substantially fluorine free insulating layer formed on the substrate, having a height, hi; a fluorine containing insulating layer formed on the substantially fluorine free insulating layer, having a height hf.

摘要翻译： 一种金属化绝缘结构，具有基板; 形成在基板上的基本上无氟的绝缘层，具有高度h1; 形成在基本上不含氟的绝缘层上的含氟绝缘层，具有高度h F 1。