公开(公告)号：US6002792A

公开(公告)日：1999-12-14

申请号：US607873

申请日：1996-02-29

申请人： Shigehisa Oguri ,  Eiji Inuzuka ,  Kouji Suzuki ,  Wataru Nagata ,  Yasushi Hiruma

发明人： Shigehisa Oguri ,  Eiji Inuzuka ,  Kouji Suzuki ,  Wataru Nagata ,  Yasushi Hiruma

IPC分类号： G01N21/95 ,  G01R31/302 ,  G06K9/00

CPC分类号： G01N21/9501 ,  G01N21/956

摘要： The present invention relates to an inspection system for transparently taking an image of inside of a semiconductor device to analyze anomalous occurrence. First, image data obtained under infrared ray illumination are converted into a first left-to-right reversed image data in which the obtained image data are reversed left to right and the first left-to-right reversed image data are stored. Next, very weak light emitted from an anomalous portion when the semiconductor device is biased is picked up under no illumination. Then, image data of very weak light is converted into a second left-to-right reversed image data in which the image data of weak light are reversed left to right. The first and second left-to-right image data are superimposed to superimpose the image specifying the anomalous location on an image of chip patterns in the semiconductor device and the superimposed image is displayed. Further, in the infrared-ray epi-irradiation means, an optical filter made of the same material as that of the semiconductor device to be measured is used to form infrared rays for illumination, so that when the back surface of the semiconductor device is irradiated with infrared rays produced by the optical filter, light having a short wavelength which is easily reflected on the surface of the semiconductor device is interrupted and infrared rays having high transmittance against the semiconductor device can be obtined.

摘要翻译： 本发明涉及一种用于透明地拍摄半导体器件内部的图像以分析异常发生的检查系统。 首先，在红外线照射下获得的图像数据被转换成从左到右反转所获得的图像数据并且存储第一左右颠倒图像数据的第一左右反转图像数据。 接下来，在半导体器件偏置时从异常部分发射的非常弱的光在无照明的情况下被拾取。 然后，非常弱的光的图像数据被转换成其中弱光的图像数据从左到右反转的第二个左至右反转图像数据。 第一和第二左右图像数据被叠加以将指定异常位置的图像叠加在半导体器件中的芯片图案的图像上，并且显示叠加的图像。 此外，在红外线照射装置中，使用与被测量的半导体装置相同的材料制成的滤光器，以形成用于照明的红外线，使得当半导体器件的背面被照射时 利用由滤光器产生的红外线，中断在半导体器件的表面上容易反射的短波长的光，可以获得对半导体器件具有高透射率的红外线。

公开(公告)号：US5532607A

公开(公告)日：1996-07-02

申请号：US274716

申请日：1994-07-18

申请人： Eiji Inuzuka ,  Shigehisa Oguri ,  Kouji Suzuki ,  Wataru Nagata ,  Yasushi Hiruma

发明人： Eiji Inuzuka ,  Shigehisa Oguri ,  Kouji Suzuki ,  Wataru Nagata ,  Yasushi Hiruma

IPC分类号： G01N21/63 ,  G01N21/88 ,  G01N21/956 ,  H01L21/66 ,  G01R31/26

CPC分类号： H01L22/12

摘要： A semiconductor device inspection system having an improved measurement accuracy and in operability. A semiconductor device is observed from the bottom surface side. First, image data obtained upon image pickup under infrared illumination is converted into first left-to-right-reversed image data corresponding to a left-to-right-reversed image and the first reversed image data is stored. Then an image is obtained under no illumination from very weak light emitted from an abnormal portion when a bias is applied to the semiconductor device. Image data of the very weak light image is then converted into second left-to-right-reversed image data corresponding to a left-to-right-reversed image. The first and second left-to-right-reversed image data are superimposedly added to each other and a superimposed image is displayed with the abnormal portion being superimposed on a chip pattern as seen from the top surface of the semiconductor device.

摘要翻译： 一种具有改进的测量精度和可操作性的半导体器件检查系统。 从底面观察半导体器件。 首先，在红外照明下拍摄的图像数据被转换成与从左到右反转的图像对应的第一左右颠倒图像数据，并存储第一反转图像数据。 然后，当向半导体器件施加偏压时，从异常部分发出的非常弱的光线在无照明条件下获得图像。 然后，非常弱的光图像的图像数据被转换成对应于从左到右的反转图像的第二左至右反转的图像数据。 第一和第二左至右反转的图像数据彼此叠加，并且从半导体器件的顶表面看，叠加的图像被显示，异常部分叠加在芯片图案上。