摘要:
The present invention relates to an inspection system for transparently taking an image of inside of a semiconductor device to analyze anomalous occurrence. First, image data obtained under infrared ray illumination are converted into a first left-to-right reversed image data in which the obtained image data are reversed left to right and the first left-to-right reversed image data are stored. Next, very weak light emitted from an anomalous portion when the semiconductor device is biased is picked up under no illumination. Then, image data of very weak light is converted into a second left-to-right reversed image data in which the image data of weak light are reversed left to right. The first and second left-to-right image data are superimposed to superimpose the image specifying the anomalous location on an image of chip patterns in the semiconductor device and the superimposed image is displayed. Further, in the infrared-ray epi-irradiation means, an optical filter made of the same material as that of the semiconductor device to be measured is used to form infrared rays for illumination, so that when the back surface of the semiconductor device is irradiated with infrared rays produced by the optical filter, light having a short wavelength which is easily reflected on the surface of the semiconductor device is interrupted and infrared rays having high transmittance against the semiconductor device can be obtined.
摘要:
A semiconductor device inspection system having an improved measurement accuracy and in operability. A semiconductor device is observed from the bottom surface side. First, image data obtained upon image pickup under infrared illumination is converted into first left-to-right-reversed image data corresponding to a left-to-right-reversed image and the first reversed image data is stored. Then an image is obtained under no illumination from very weak light emitted from an abnormal portion when a bias is applied to the semiconductor device. Image data of the very weak light image is then converted into second left-to-right-reversed image data corresponding to a left-to-right-reversed image. The first and second left-to-right-reversed image data are superimposedly added to each other and a superimposed image is displayed with the abnormal portion being superimposed on a chip pattern as seen from the top surface of the semiconductor device.
摘要:
According to an embodiment of the present invention, an insulating communication circuit includes a first insulating circuit 62#11 having first and second circuits, a second insulating circuit 62#12 having third and fourth circuits, and a communication interface that is connected to a first ground and transmits a signal to the first circuit based on a communication signal and a clock signal from an external control device.
摘要:
A drive apparatus for an opening/closing body for a vehicle includes a drive unit including a rotational drive apparatus, a reduction gear mechanism linked with a rotational shaft of the rotational drive apparatus, and an output member linked with the rotational shaft through the reduction gear mechanism and linked with the opening/closing body through a connection member, a first pulse signal generator provided at the drive unit and generating a first pulse signal on the basis of a rotation of the rotational shaft, a second pulse signal generator provided at the drive unit and generating a second pulse signal on the basis of a rotation of either one of the reduction gear mechanism and the output member, and a control means for calculating an opening/closing position of the opening/closing body on the basis of the first pulse signal emitted by the first pulse signal generator utilizing the second pulse signal emitted by the second pulse signal generator as a base point and controlling the rotational drive apparatus corresponding to the opening/closing position of the opening/closing body.
摘要:
A thin-film semiconductor element provided on a channel area with a channel protection layer, characterized by the fact that a source electrode layer and a drain electrode layer respectively have overlapping areas on the channel protection layer, the side walls of the source electrode layer and the drain electrode layer extend in the overlapping areas beyond the side wall of the channel protection layer in at least one direction of the width thereof, and the source electrode layer and the drain electrode layer possess points of overlap intersection with the semiconductor layer at the points of overlap intersection thereof with the channel protection layer. Owing to the construction described above, the leakage current generated by exposure to light can be decreased and the thin-film semiconductor element can be produced by a simple process of manufacture.
摘要:
A highly-integrated semiconductor IC device includes a semiconductive substrate, on which an internal function circuit is arranged to have a first plurality of input terminals and a second plurality of output terminals. A logic circuit is arranged on the substrate and is connected to the internal circuit through the output terminals. The logic circuit has a third plurality of output terminals, which are less in number than the outputs of the internal circuit. These logic output terminals are coupled to the same number of inspection terminals, which are adapted to be coupled to a known electric inspection tool. The logic circuit processes the voltage signals appearing at the output terminals of the internal circuit so as to cause these signals to decrease in number. The output signals of the logic circuit are sent to the inspection terminals as monitor signals, based on which an inspection is carried out to determine whether the internal circuit operates normally.
摘要:
A photo and heat sensitive recording medium has a front side coated with a layer of photo-curable composition which has photo-curability and heat fusibility in an uncured state. In an image recording method, the recording medium is exposed to light on the basis of image information, to photo-cure light-illuminated areas of the layer of photo-curable composition. Subsequently, the recording medium is superimposed upon a side of a subject being transferred. The superimposed recording medium and subject are heated to transfer an image corresponding to uncured areas on the recording medium, onto the side of the subject.
摘要:
To inspect a pneumatic tire for excessively coarse or dense tire cord arrangement in a side wall portion of the tire, a surface irregularity resulting from such improper tire cord arrangement is detected by the use of a capacitance-type distance detector unit positioned in the vicinity of the side wall portion of the tire inflated, wherein one of the tire and the detector units is driven so that the tire and detector unit turn with respect to each other about the center axis of the tire for producing from the detector unit an analog signal which varies with the distance between the outer surface of the detector unit and the tire and wherein the analog signal from the detector unit is processed to detect an improper convexity or concavity in the side wall portion of the tire.
摘要:
A small portable generator for generating a single-phase AC voltage under PWM control is subject to output voltage fluctuations under a heavy load. With a view to reducing such output voltage fluctuations, it is intended to provide a portable generator (100) which rectifies an AC voltage generated by an AC generator (50) with a DC-voltage-generating circuit (110) using thyristors to charge a DC-power-source unit (120), and converts the DC output voltage of the DC-power-source unit (120) with an inverter circuit (130) into a single-phase AC voltage to be supplied, the portable generator (100) being provided with a constant-voltage-control unit (500) which effects control to keep the DC voltage of the DC-power-source unit (120) substantially constant by detecting the voltage of the DC-power-source unit (110) and controlling the continuity angle of the thyristors (111) in the DC-power-source unit (120), and at the same time effects control to advance the start of continuity of the thyristors (111) when the amperage flowing to the inverter circuit (130) becomes great.