公开(公告)号：US20140197449A1

公开(公告)日：2014-07-17

申请号：US14155232

申请日：2014-01-14

Applicant: Electronics and Telecommunications Research Institute

Inventor： Kunsik PARK ,  Kyoung IL NA ,  JIN-GUN KOO ,  Jin Ho LEE ,  Jong II WON

IPC: H01L29/747

CPC classification number: H01L29/861 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/4238

Abstract: Provided is a semiconductor rectifier device. The semiconductor rectifier device may include a substrate doped with a first conductive type, a second electrode provided on a bottom surface of the substrate, an active region and a field region defined on the substrate, a gate provided in the active region, a gate insulating film provided between the gate and the substrate, body regions provided on the substrate adjacent to first and second sides of the gate, facing each other, and doped with a second conductive type dopant different from the first conductive type, and a second conductive type plug region formed on the substrate adjacent to third and fourth sides of the gate, connecting the first and second sides.

Abstract translation: 提供了一种半导体整流器件。 半导体整流器件可以包括掺杂有第一导电类型的衬底，设置在衬底的底表面上的第二电极，在衬底上限定的有源区和场区，设置在有源区中的栅极，栅极绝缘 提供在所述栅极和所述基板之间的薄膜，设置在所述基板上的与所述栅极的第一和第二侧相邻的主体区域，彼此面对，并且掺杂有不同于所述第一导电类型的第二导电型掺杂物;以及第二导电型插塞 区域，形成在与栅极的第三和第四侧相邻的衬底上，连接第一和第二面。