公开(公告)号：US20150140677A1

公开(公告)日：2015-05-21

申请号：US14308854

申请日：2014-06-19

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jin Hwa RYU ,  Kyu Ha BAEK ,  Lee Mi DO ,  Kang Bok LEE

IPC: G01N21/64 ,  G01N21/85

CPC classification number: G01N21/8507 ,  B29K2101/00 ,  B29K2105/24 ,  B29K2883/00 ,  B29K2995/0035 ,  G01N21/643 ,  Y10T436/209163

Abstract: Provided is a polymer planar optical circuit type dissolved oxygen sensor and a method of fabricating the sensor, including a polymer planar sheet embedded with a first wavelength optical signal transmission line transmitting a first wavelength optical signal emitted from a first optical source and a second wavelength optical signal transmission line transmitting a second optical signal emitted from a sensing membrane and having a fluorescent property, and the sensing membrane coated on the polymer planar sheet, and further including a second optical source emitting the second wavelength optical signal to compare an optical property of the second wavelength optical signal to an optical property of the first wavelength optical signal emitted from the first optical source.

Abstract translation: 本发明提供一种聚合物平面光电路式溶解氧传感器及其制造方法，该传感器包括：聚合物平面片，其嵌入第一波长光信号传输线，其传输从第一光源发射的第一波长光信号和第二波长光 信号传输线传输从感测膜发射的并具有荧光特性的第二光信号，以及涂覆在聚合物平板上的感测膜，还包括发射第二波长光信号的第二光源，以比较 第二波长光信号到从第一光源发射的第一波长光信号的光学特性。

公开(公告)号：US20150161421A1

公开(公告)日：2015-06-11

申请号：US14194714

申请日：2014-03-01

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang Yeoun LEE ,  Kang Bok LEE ,  Kyu Ha BAEK

IPC: G06K7/10

CPC classification number: G06K7/10207 ,  G06K7/10217

Abstract: Provided is an apparatus for controlling supply of power to a radio frequency identification (RFID) tag, in which an internal large-capacity memory of an RFID tag is physically divided into a plurality of memory blocks, and power is selectively supplied to each of the divided plurality of memory blocks depending on the case, thereby reducing power consumption of the RFID tag. The apparatus includes a first memory configured to store information which is used to perform an inventory operation with an RFID reader, a second memory configured to store a file and data associated with the RFID tag, and a control unit configured to perform the inventory operation with the RFID reader by using the inventory information stored in the first memory, and when a command for accessing the second memory is received from the RFID reader, allow power to be supplied to the second memory.

Abstract translation: 提供了一种用于控制向射频识别（RFID）标签供电的装置，其中将RFID标签的内部大容量存储器物理地划分为多个存储块，并且电源被选择性地提供给每个 根据情况分割多个存储器块，从而降低RFID标签的功耗。 该装置包括：第一存储器，被配置为存储用于使用RFID读取器执行库存操作的信息;第二存储器，被配置为存储与RFID标签相关联的文件和数据;以及控制单元，被配置为执行库存操作， 通过使用存储在第一存储器中的库存信息，并且当从RFID读取器接收到访问第二存储器的命令时，允许向第二存储器供应电力。

公开(公告)号：US20160274391A1

公开(公告)日：2016-09-22

申请号：US14823336

申请日：2015-08-11

Applicant: Electronics and Telecommunications Research Institute

Inventor： Chan Mo KANG ,  Lee Mi DO ,  Jin Hwa RYU ,  Kyu Ha BAEK

IPC: G02F1/1341 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/1339

CPC classification number: G02F1/1341 ,  G02F1/133305 ,  G02F1/133377 ,  G02F1/1681 ,  G02F2202/28

Abstract: Provided herein is a flexible display device including a lower substrate; spacers formed on the lower substrate; an adhesive deposited on the spacers; a display material filled in between the spacers; and an upper substrate adhered to the lower substrate by the adhesive.

Abstract translation: 本文提供了一种柔性显示装置，包括下基板; 在下基板上形成间隔物; 沉积在间隔物上的粘合剂; 填充在间隔件之间的显示材料; 以及通过粘合剂粘附到下基板的上基板。

公开(公告)号：US20130294172A1

公开(公告)日：2013-11-07

申请号：US13871300

申请日：2013-04-26

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Kun Sik PARK ,  Kyu Ha BAEK

IPC: G11C16/04 ,  H01L29/788

CPC classification number: G11C16/0425 ,  G11C16/0441 ,  G11C2216/10 ,  H01L27/11558 ,  H01L29/66825 ,  H01L29/788 ,  H01L29/7881

Abstract: A nonvolatile memory and a method of manufacturing a nonvolatile memory are disclosed. A nonvolatile memory according to an exemplary embodiment may include a deep well formed on a substrate, a first well formed within the deep well, a second well formed separately from the first well within the deep well, a first metal-oxide-semiconductor field-effect transistor (MOSFET) formed on the first well, and a second MOSFET formed on the second well. According to a method of manufacturing a nonvolatile memory according to an exemplary embodiment, a well region of a control MOSFET of a memory cell may be shared with a control MOSFET of an adjacent memory cell, or a well region of a tunneling MOSFET of a memory cell may be shared with a tunneling MOSFET of an adjacent memory cell, thereby reducing an area of the memory cells. Further, the nonvolatile memory according to the exemplary embodiment may constantly maintain a voltage of a shared well region in the tunneling MOSFET and apply a different voltage to a source/drain from that of an adjacent cell, thereby recording data only in the selected memory cell or deleting recorded data from the selected memory cell while sharing the well region.

Abstract translation: 公开了非易失性存储器和制造非易失性存储器的方法。 根据示例性实施例的非易失性存储器可以包括在衬底上形成的深阱，在深阱内形成的第一阱，与深阱内的第一阱分开形成的第二阱，第一金属氧化物半导体场 - 形成在第一阱上的效应晶体管（MOSFET）和形成在第二阱上的第二MOSFET。 根据根据示例性实施例的制造非易失性存储器的方法，存储器单元的控制MOSFET的阱区可以与相邻存储器单元的控制MOSFET或存储器的隧道MOSFET的阱区共享 单元可以与相邻存储器单元的隧道MOSFET共享，从而减小存储单元的面积。 此外，根据示例性实施例的非易失性存储器可以恒定地保持隧道MOSFET中的共享阱区的电压，并且向相邻单元的源极/漏极施加不同的电压，从而仅将数据记录在所选存储单元 或者在共享井区域的同时从所选存储单元中删除记录数据。