公开(公告)号：US20230227960A1

公开(公告)日：2023-07-20

申请号：US17968126

申请日：2022-10-18

Applicant: Electronics and Telecommunications Research Institute

Inventor： O-Kyun KWON ,  Namje KIM ,  Ho Sung KIM ,  Miran PARK ,  SEUNGCHUL LEE ,  Won Seok HAN

IPC: C23C14/04 ,  G02B6/132

CPC classification number: C23C14/042 ,  G02B6/132 ,  G02B2006/12173

Abstract: Provided is a method of manufacturing an optical integrated device. The method includes forming a lower clad layer on a substrate, forming a plurality of mask patterns arranged in one direction on the lower clad layer, forming a core layer on a portion of the lower clad layer by a selective area growth method using the mask patterns as deposition masks, and forming an upper clad layer on the core layers, wherein the mask patterns have different widths or include mask layers of different materials.