LOW POWER MICRO SEMICONDUCTOR GAS SENSOR AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    LOW POWER MICRO SEMICONDUCTOR GAS SENSOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    低功率微型半导体气体传感器及其制造方法

    公开(公告)号:US20150021716A1

    公开(公告)日:2015-01-22

    申请号:US14271808

    申请日:2014-05-07

    CPC classification number: G01N27/128

    Abstract: Provided are a low power micro semiconductor gas sensor and a method of manufacturing the same. The micro semiconductor gas sensor includes a substrate having an air gap, a peripheral portion provided on the substrate and comprising electrode pads, a sensor portion comprising sensing electrodes connected from the electrode pads and a sensing film on the sensing electrodes and floating on the air gap, and a connection portion comprising conductive wires electrically connecting the electrode pads and the sensing electrodes to each other, and connecting the peripheral portion and the sensor portion to one another. In this case, the air gap penetrates the substrate, and a thermal isolation area extended from the air gap to a space between the peripheral portion and the sensor portion is provided.

    Abstract translation: 提供一种低功率微半导体气体传感器及其制造方法。 微型半导体气体传感器包括具有气隙的基板,设置在基板上并包括电极焊盘的周边部分,传感器部分包括从电极焊盘连接的感测电极和感测电极上的浮动在气隙上的感测膜 以及连接部分,其包括将电极焊盘和感测电极彼此电连接并将周边部分和传感器部分彼此连接的导线。 在这种情况下,气隙穿透基板,并且设置从气隙延伸到周边部分和传感器部分之间的空间的热隔离区域。

    TARGETS FOR GENERATING IONS AND TREATMENT APPARATUSES USING THE TARGETS
    6.
    发明申请
    TARGETS FOR GENERATING IONS AND TREATMENT APPARATUSES USING THE TARGETS 有权
    使用目标产生离子和处理装置的目标

    公开(公告)号:US20130178689A1

    公开(公告)日:2013-07-11

    申请号:US13737706

    申请日:2013-01-09

    CPC classification number: H01J27/022 A61N5/1077 A61N2005/1088 H01J27/24

    Abstract: Provided is an ion beam treatment apparatus including the target. The ion beam treatment apparatus includes a substrate having a first surface and a second surface opposed to the first surface, and including a cone type hole decreasing in width from the first surface to the second surface to pass through the substrate, wherein an inner wall of the substrate defining the cone type hole is formed of a metal, an ion generation thin film attached to the second surface to generate ions by a laser beam incident into the cone type hole through the first surface and strengthen, and a laser that emits a laser beam to generate ions from the ion generation thin film and project the ions onto a tumor portion of a patient. The laser beam incident into the cone type hole is focused by the cone type hole and is strengthened.

    Abstract translation: 提供了包括靶的离子束处理装置。 离子束处理设备包括具有与第一表面相对的第一表面和第二表面的基底,并且包括从第一表面到第二表面宽度减小的锥形孔以穿过基底,其中内壁为 限定锥形孔的基板由金属形成,附着于第二表面的离子产生薄膜通过入射到通过第一表面的锥形孔中的激光束产生离子,并且激光发射激光 光束从离子产生薄膜产生离子并将离子投射到患者的肿瘤部分上。 入射到锥形孔中的激光束被锥形孔聚焦并被加强。

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