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公开(公告)号：US20180012861A1
公开(公告)日：2018-01-11
申请号：US15631678
申请日：2017-06-23
Inventor： Ji-Young OH , Joo Yeon KIM , Jae Bon KOO , Bock Soon NA , Nae-Man PARK , Chan Woo PARK , Sang Seok LEE , Soon Won JUNG , Chi-Sun HWANG , Keunsoo LEE
IPC: H01L23/00
CPC classification number: H01L24/83 , H01L51/0097 , H01L51/0545 , H01L2224/8349 , H01L2924/078 , Y02E10/549
Abstract: Provided is a method of manufacturing an electronic apparatus which includes preparing a substrate having a first Young's modulus, disposing a thin film having a second Young's modulus greater than the first Young's modulus on the substrate, disposing an electronic device on the thin film, and disposing a capping layer configured to cover the electronic device on the thin film.
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公开(公告)号：US20140011297A1
公开(公告)日：2014-01-09
申请号：US14022705
申请日：2013-09-10
Inventor： Sung Min YOON , Chun Won BYUN , Shin Hyuk YANG , Sang Hee PARK , Soon Won JUNG , Seung Youl KANG , Chi Sun HWANG , Byoung Gon YU
IPC: H01L29/66
CPC classification number: H01L29/6684 , B82Y10/00 , G11C11/22 , H01L21/28291 , H01L27/1159 , H01L29/78391
Abstract: Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.
Abstract translation: 提供一种非易失性存储单元及其制造方法。 非易失性存储单元包括存储晶体管和驱动晶体管。 存储晶体管包括设置在基板上的半导体层，缓冲层，有机铁电层和栅极电极。 驱动晶体管包括设置在基板上的半导体层，缓冲层，栅极绝缘层和栅极电极。 存储晶体管和驱动晶体管设置在同一衬底上。 非易失性存储单元在可见光区域是透明的。
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