公开(公告)号：US4873436A

公开(公告)日：1989-10-10

申请号：US46562

申请日：1987-05-04

申请人： Emil Kamieniecki ,  Leszek Reiss ,  William C. Goldfarb

发明人： Emil Kamieniecki ,  Leszek Reiss ,  William C. Goldfarb

IPC分类号： G01R29/14 ,  G01R29/24 ,  G01R31/265 ,  G01T1/28 ,  G01T1/29 ,  G03G5/00 ,  G03G5/02 ,  G03G15/00 ,  G03G15/054 ,  G03G15/22 ,  H04N1/04 ,  H04N1/113 ,  H04N5/30

CPC分类号： G01T1/28 ,  G01R29/24 ,  G01R31/2656 ,  G01T1/246 ,  G03G15/00 ,  G03G15/054 ,  G03G15/221 ,  G03G5/00 ,  G03G5/02 ,  H04N5/30

摘要： A method and apparatus are described for the nondestructive readout of a latent electrostatic image formed on a sheet or layer of insulating material. A sheet or layer of semiconductor material is disposed in relatively close proximity to the insulating material. A latent electrostatic image formed on the insulating material (by any known means) causes a surface depletion layer to be produced by induction at the surface of the semiconductor material. The location and distribution of the accumulated charges on the semiconductor material are read out as analog electrical signals corresponding to the AC surface photovoltage induced on the semiconductor material as the semiconductor material is scanned with a low intensity modulated light beam of appropriate wavelength, the magnitude of the analog signals depending on the local charge density. The analog electrical signals so obtained are then digitized, processed and stored and/or displayed.

摘要翻译： 对于在绝缘材料的片材或层上形成的静电潜像的非破坏性读出，描述了一种方法和装置。 半导体材料的片或层设置成相对靠近绝缘材料。 在绝缘材料上形成的静电潜像（通过任何已知的方式）通过在半导体材料的表面进行感应而产生表面耗尽层。 半导体材料上的累积电荷的位置和分布被读出作为模拟电信号，对应于半导体材料上感应的AC表面光电压，因为半导体材料用适当波长的低强度调制光束扫描， 模拟信号取决于局部电荷密度。 然后如此获得的模拟电信号被数字化，处理和存储和/或显示。

公开(公告)号：US5091691A

公开(公告)日：1992-02-25

申请号：US280973

申请日：1988-12-07

申请人： Emil Kamieniecki ,  William C. Goldfarb ,  Michael Wollowitz

发明人： Emil Kamieniecki ,  William C. Goldfarb ,  Michael Wollowitz

IPC分类号： G01R31/265

CPC分类号： G01R31/2656

摘要： An apparatus for making ac surface photovoltage (SPV) measurements of a specimen of semiconductor material under dc bias voltage conditions includes a light source whose output beam is intensity modulated, an adjustable dc bias voltage source, a conductive base for supporting the specimen and a novel capacitance type reference electrode assembly for sensing the SPV signals. The reference electrode assembly includes in one embodiment a button made of insulating elastomeric material and attached to a rigid plate made of insulating material. A film made of insulating material and having a conductive coating on one side which serves as a reference electrode is attached to the button. When SPV measurements are being taken, the film is pressed against the specimen with pressure sufficient to hold the reference electrode in close compliance with the specimen, with pressure being applied to the plate from an external source and being transmitted from the rigid plate to the film through the elastomeric button.

摘要翻译： 用于在直流偏置电压条件下进行半导体材料样品的交流表面光电压（SPV）测量的装置包括其输出光束被强度调制的光源，可调直流偏置电压源，用于支撑样品的导电基底和新颖的 用于感测SPV信号的电容型参考电极组件。 参考电极组件在一个实施例中包括由绝缘弹性体材料制成并附接到由绝缘材料制成的刚性板的按钮。 由绝缘材料制成的薄膜，并且在一侧具有用作参考电极的导电涂层的薄膜附着到按钮上。 当进行SPV测量时，将膜压在足以使参考电极与试样紧密一致的压力下压在样品上，压力从外部源施加到板上并从刚性板传递到膜 通过弹性按钮。

公开(公告)号：US4833324A

公开(公告)日：1989-05-23

申请号：US46454

申请日：1987-05-04

申请人： Emil Kamieniecki ,  William C. Goldfarb

发明人： Emil Kamieniecki ,  William C. Goldfarb

IPC分类号： G03B42/02 ,  G01R29/14 ,  G01R29/24 ,  G01R31/265 ,  G01T1/28 ,  G01T1/29 ,  G03F9/00 ,  G03G5/00 ,  G03G5/02 ,  G03G15/00 ,  G03G15/054 ,  G03G15/22 ,  H04N1/04 ,  H04N1/113 ,  H04N5/30

CPC分类号： G01R29/24 ,  G01R31/2656 ,  G01T1/246 ,  G01T1/28 ,  G03G15/00 ,  G03G15/04045 ,  G03G15/054 ,  G03G15/221 ,  G03G5/00 ,  G03G5/02 ,  H04N5/30

摘要： A method and apparatus are described for the nondestructive readout of a latent electrostatic image formed on a sheet or layer of insulating material. A sheet or layer of semiconductor material is disposed in relatively close proximity to the insulating material. A latent electrostatic image formed on the insulating material (by any known means) causes a surface depletion layer to be produced by induction at the surface of the semiconductor material. The location and distribution of the accumulated charges on the semiconductor material are read out as analog electrical signals corresponding to the AC surface photovoltage induced on the semiconductor material as the semiconductor material is scanned with a low intensity modulated light beam of appropriate wavelength, the magitude of the analog signals depending on the local charge density. The analog electrical signals so obtained are then digitized, processed and stored and/or displayed.

摘要翻译： 对于在绝缘材料的片材或层上形成的静电潜像的非破坏性读出，描述了一种方法和装置。 半导体材料的片或层设置成相对靠近绝缘材料。 在绝缘材料上形成的静电潜像（通过任何已知的方式）通过在半导体材料的表面进行感应而产生表面耗尽层。 半导体材料上的累积电荷的位置和分布被读出作为模拟电信号，对应于半导体材料上感应的AC表面光电压，因为半导体材料用适当波长的低强度调制光束扫描， 模拟信号取决于局部电荷密度。 然后如此获得的模拟电信号被数字化，处理和存储和/或显示。

公开(公告)号：US4891584A

公开(公告)日：1990-01-02

申请号：US171677

申请日：1988-03-21

申请人： Emil Kamieniecki ,  William C. Goldfarb ,  Mike Wollowitz

发明人： Emil Kamieniecki ,  William C. Goldfarb ,  Mike Wollowitz

IPC分类号： G01R31/265

CPC分类号： G01R31/2656

摘要： An apparatus for making ac surface photovoltage (SPV) measurements of a specimen of semiconductor material under dc bias voltage conditions includes a light source whose output beam is intensity modulated, an adjustable dc bias voltage source, a conductive base for supporting the specimen and a novel capacitance type reference electrode assembly for sensing the SPV signals. The reference electrode assembly includes in one embodiment a transparent flexible sheet of insulating material having on one surface a first conductive coating which serves as a reference electrode and a second conductive coating which serves as a guard electrode, the first coating being transparent. The flexible sheet of insulating material is attached to a flat glass plate through an annular spacer. An elastomeric button is positioned between the sheet and the glass plate. When the SPV measurements are being taken the flexible sheet is pressed against the specimen with pressure sufficient to hold the reference electrode in close compliance with the specimen, with the pressure being applied to the glass plate and being transmitted from the glass plate to the flexible sheet of insulating material through the elastomeric button.

摘要翻译： 用于在直流偏置电压条件下进行半导体材料样品的交流表面光电压（SPV）测量的装置包括其输出光束被强度调制的光源，可调直流偏置电压源，用于支撑样品的导电基底和新颖的 用于感测SPV信号的电容型参考电极组件。 参考电极组件包括在一个实施例中的绝缘材料的透明柔性片，其在一个表面上具有用作参考电极的第一导电涂层和用作保护电极的第二导电涂层，第一涂层是透明的。 绝缘材料的柔性片通过环形间隔件连接到平板玻璃板上。 弹性按钮位于片材和玻璃板之间。 当采取SPV测量时，柔性片被压在样本上，压力足以使参考电极保持紧密的样品，压力施加到玻璃板并从玻璃板传递到柔性片 的绝缘材料通过弹性按钮。

公开(公告)号：US5453703A

公开(公告)日：1995-09-26

申请号：US159334

申请日：1993-11-29

申请人： William C. Goldfarb

发明人： William C. Goldfarb

IPC分类号： G01R31/26 ,  G01R31/265 ,  H01L21/66

CPC分类号： G01R31/2656

摘要： A method is provided for determining the minority carrier surface recombination lifetime constant (t.sub.s) of a specimen of semiconductor material. The specimen is positioned between a pair of electrodes, the specimen being disposed on one of the electrodes and being spaced form the other electrode. A signal is provided corresponding to the capacitance between the specimen and the electrode spaced from the specimen. A region of the surface of the specimen is illuminated with a beam of light of predetermined wavelengths and which is intensity modulated at a predetermined frequency and varying in intensity over a predetermined range. A fixed bias voltage V.sub.g applied between the pair of electrodes, the fixed bias voltage being of a value such that the semiconductor surface is in a state of depletion or inversion,. A signal is provided representing the ac photocurrent induced at the region of the specimen illuminated by the light beam. The intensity of the light beam and frequency of modulation of the light beam are selected such that the ac photocurrent is nearly proportional to the intensity of the light beam and reciprocally proportional to the frequency of modulation of the light beam. A signal is provided corresponding to the illumination intensity of the beam of light. The surface minority carrier recombination time constant (t.sub.s) is then determined using the ac photocurrent capacitance and illumination intensity information.

摘要翻译： 提供了一种用于确定半导体材料样品的少数载流子表面复合寿命常数（ts）的方法。 样品位于一对电极之间，试样设置在一个电极上并与另一个电极隔开。 对应于样本和与样本间隔开的电极之间的电容提供信号。 样本表面的区域用预定波长的光束照射，并且以预定频率强度调制并且在预定范围内变化。 施加在一对电极之间的固定偏置电压Vg，固定偏置电压为使得半导体表面处于耗尽或反转状态的值。 提供表示在由光束照射的样本的区域处感应的交流光电流的信号。 选择光束的强度和光束的调制频率，使得交流光电流几乎与光束的强度成比例，并且与光束的调制频率成正比。 对应于光束的照明强度提供信号。 然后使用交流光电流电容和照明强度信息确定表面少数载流子复合时间常数（ts）。