公开(公告)号：US20170330726A1

公开(公告)日：2017-11-16

申请号：US15593486

申请日：2017-05-12

Applicant: Entegris, Inc.

Inventor： Barry Lewis Chambers ,  Biing-Tsair Tien ,  Joseph D. Sweeney ,  Ying Tang ,  Oleg Byl ,  Steven E. Bishop ,  Sharad N. Yedave

IPC: H01J37/317 ,  C09D5/24 ,  C09D1/00 ,  H01J37/32 ,  H01L21/67 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C09D1/00 ,  C09D5/24 ,  H01J37/026 ,  H01J37/3244 ,  H01J2237/006 ,  H01J2237/022 ,  H01L21/265 ,  H01L21/67213

Abstract: Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N2) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF3, N2F4, F2, SiF4, WF6, PF3, PF5, AsF3, AsF5, CF4 and other fluorinated hydrocarbons of CxFy (x≧1, y≧1) general formula, SF6, HF, COF2, OF2, BF3, B2F4, GeF4, XeF2, O2, N2O, NO, NO2, N2O4, and O3, and optionally hydrogen-containing gas, e.g., hydrogen-containing gas including one or more selected from the group consisting of H2, NH3, N2H4, B2H6, AsH3, PH3, SiH4, Si2H6, H2S, H2Se, CH4 and other hydrocarbons of CxHy (x≧1, y≧1) general formula and GeH4.