公开(公告)号：US12075701B2

公开(公告)日：2024-08-27

申请号：US17516228

申请日：2021-11-01

申请人： Epir, Inc.

发明人： Sushant Sonde ,  Yong Chang ,  Silviu Velicu ,  Srinivasan Krishnamurthy

IPC分类号： H10N15/10

CPC分类号： H10N15/15

摘要： A Terahertz Source and Detector device is provided that includes a nanostructured metasurface configured to transmit fully into a layer of absorbing material below the metasurface to achieve transparent conductivity in the visible spectrum region, wherein the metasurface is composed of crystalline material with very high mobility. The crystalline material can be composed of HgCdTe. The HgCdTe material can have a bandgap of about 700 meV. The intrinsic carrier concentration can be 1012 cm−3 at 300K.

公开(公告)号：US20220231214A1

公开(公告)日：2022-07-21

申请号：US17516228

申请日：2021-11-01

申请人： Epir, Inc.

发明人： Sushant Sonde ,  Yong Chang ,  Silviu Velicu ,  Srinivasan Krishnamurthy

IPC分类号： H01L37/02

摘要： A Terahertz Source and Detector device is provided that includes a nanostructured metasurface configured to transmit fully into a layer of absorbing material below the metasurface to achieve transparent conductivity in the visible spectrum region, wherein the metasurface is composed of crystalline material with very high mobility. The crystalline material can be composed of HgCdTe. The HgCdTe material can have a bandgap of about 700 meV. The intrinsic carrier concentration can be 1012 cm−3 at 300K.

公开(公告)号：US20240201105A1

公开(公告)日：2024-06-20

申请号：US18143257

申请日：2023-05-04

申请人： EPIR, Inc.

发明人： Issac L. Chang ,  Sushant Sonde ,  Silviu Velicu ,  Yong Chang

IPC分类号： G01N21/95 ,  G01N1/42

CPC分类号： G01N21/9505 ,  G01N1/42 ,  G01N2201/06113 ,  G01N2201/0636 ,  G01N2201/103

摘要： A method of contactless, non-destructive contamination-free 2-dimensional mapping of the cutoff wavelength (or bandgap) and the minority carrier lifetime, which is measured through photo-excited excess free carrier absorption decay method, in semiconductor thin film materials and wafers, including typical semiconductor wafers such as Si, Ge, GaAs, and GaSb as well as narrow gap semiconductors such as InSb, type II superlattices (T2SLs) and HgCdTe, at variable temperatures from room temperature down to 2K, utilizing a three-chamber arrangement in which the external chamber and cold chamber are held at ultra-high vacuum and the innermost (sample) chamber is held at cryogenic temperature to cool wafer or thin film samples through gaseous thermal transfer media to cryogenic temperatures down to 1.9 K under pumping. To achieve full-range wafer mapping, the measurement and sensing components for transmitted and reflected light, including infrared probing beam sources, such as long-wavelength infrared lasers, fast HgCdTe detectors, or detector liner or 2-dimensional arrays mounted in liquid nitrogen dewars or thermoelectric (TE)-cooled detector housings, excitation lasers with a wavelength shorter than the bandgap of the sample to be measured, a broadband infrared source with focusing mirror, light grating with mirror and its other accessories including the motion execution and control components, and a linear LWIR array in a liquid nitrogen Dewar, are positioned outside all three chambers and can be moved through a carriage mounting to create the radial component of the mapping motion domain. The rotation of the sample holder is controlled through a drive gear located inside the sample chamber and creates the angular component of the mapping motion domain.