Power generation system
    2.
    发明授权

    公开(公告)号:US12114574B2

    公开(公告)日:2024-10-08

    申请号:US17983579

    申请日:2022-11-09

    发明人: Tomoyasu Usui

    CPC分类号: H10N15/15

    摘要: A power generation system that includes: a ceramic element including a ferroelectric ceramic having a Curie temperature of 90° C. or lower and a space charge polarization; and a power extraction device that extracts power from the ceramic element when a temporal temperature change exceeding the Curie temperature is applied to the ferroelectric ceramic.

    Portable power supply
    4.
    发明授权

    公开(公告)号:US12041853B2

    公开(公告)日:2024-07-16

    申请号:US17296392

    申请日:2019-11-14

    申请人: NEC Corporation

    IPC分类号: H10N15/10 F24C3/14

    CPC分类号: H10N15/10 F24C3/14

    摘要: A portable power supply according to one or more embodiments includes a combustion device (20) and a heating container (30) that retains an object to be heated, wherein at least a part of a portion of the heating container, the portion being directly heated by the combustion device, is provided with a magnetic metal plate (32) that has spontaneous magnetization and that generates electromotive force due to an anomalous Nernst effect induced by the heating, and wherein electrodes (33a, 33b) for drawing power are provided. Thus, the heating container for generating electricity has a simple configuration, and furthermore the portable power supply is provided with both the heating container and the combustion device.

    HgCdTe metasurface-based terahertz source and detector

    公开(公告)号:US12075701B2

    公开(公告)日:2024-08-27

    申请号:US17516228

    申请日:2021-11-01

    申请人: Epir, Inc.

    IPC分类号: H10N15/10

    CPC分类号: H10N15/15

    摘要: A Terahertz Source and Detector device is provided that includes a nanostructured metasurface configured to transmit fully into a layer of absorbing material below the metasurface to achieve transparent conductivity in the visible spectrum region, wherein the metasurface is composed of crystalline material with very high mobility. The crystalline material can be composed of HgCdTe. The HgCdTe material can have a bandgap of about 700 meV. The intrinsic carrier concentration can be 1012 cm−3 at 300K.