Imager or particle or radiation detector and method of manufacturing the same
    1.
    发明授权
    Imager or particle or radiation detector and method of manufacturing the same 失效
    成像仪或粒子或辐射探测器及其制造方法

    公开(公告)号:US06362484B1

    公开(公告)日:2002-03-26

    申请号:US09247627

    申请日:1999-02-10

    IPC分类号: G01J528

    CPC分类号: G01T1/2935 H01J47/02

    摘要: The present invention may provide a particle or radiation detector or imager which may be used for accurate recording of medical (2-D) X-ray images. The imager includes at least one detector panel. The detector panel includes a microgap detector with an array of pixel electrodes of a novel form. Each pixel electrode is insulated from a planar cathode by means of an insulating layer. Each pixel electrode is connected to an underlying contact by means of a via hole in the insulating layer. The insulating layer is preferably conformal with the electrodes. The underlying contact is connected to an electronic measuring element which preferably lies underneath the electrode and is about the same size as the electrode. The measuring element may be a storage device, a digital counter or similar. A switching transistor is connected to the measuring device. The switching transistor may be a thin film transistor. Alternatively, both measuring element and transistor may be formed in a single crystal semiconductor, e.g. a VLSI, and a complete imager formed from several detector panels in an array. The drift electrode of the microgap detector preferably includes a photocathode. The photocathode may be directly evaporated onto a phosphor.

    摘要翻译: 本发明可以提供可用于医疗(2-D)X射线图像的精确记录的粒子或辐射检测器或成像器。 成像器包括至少一个检测器面板。 检测器面板包括具有新颖形式的像素电极阵列的微隙检测器。 每个像素电极通过绝缘层与平面阴极绝缘。 每个像素电极通过绝缘层中的通孔连接到下面的触点。 绝缘层优选与电极保持一致。底层触点连接到电子测量元件,电子测量元件优选地位于电极下方并且与电极大致相同的尺寸。 测量元件可以是存储装置,数字计数器等。 开关晶体管连接到测量装置。 开关晶体管可以是薄膜晶体管。 或者,测量元件和晶体管都可以形成在单晶半导体中,例如, VLSI,以及由阵列中的多个检测器面板形成的完整成像器。微间隙检测器的漂移电极优选包括光电阴极。 光电阴极可以直接蒸发到磷光体上。

    Imager or particle detector and method of manufacturing the same
    2.
    发明授权
    Imager or particle detector and method of manufacturing the same 失效
    成像仪或粒子检测器及其制造方法

    公开(公告)号:US6121622A

    公开(公告)日:2000-09-19

    申请号:US21221

    申请日:1998-02-10

    CPC分类号: G01T1/2935 H01J47/02

    摘要: The present invention may provide a particle detector or imager which may be used for accurate recording of medical (2-D) X-ray images. The imager includes at least one detector panel. The detector panel includes a microgap detector with an array of pixel electrodes of a novel form. Each pixel electrode is insulated from a planar cathode by means of an insulating layer. Each pixel electrode is connected to an underlying contact by means of a via hole in the insulating layer. The insulating layer is preferable conformal with the electrodes. The underlying contact is connected to an electronic measuring element which preferably lies underneath the electrode and is about the same size as the electrode. The measuring element may be a storage device, a digital counter or similar. A switching transistor is connected to the measuring device. The switching transistor may be a thin film transistor. Alternatively, both measuring element and transistor may be formed in a single crystal semiconductor, e.g. a VLSI, and a complete imager formed from several detector panels in an array. The drift electrode of the microgap detector preferably includes a photocathode. The photocathode may be directly evaporated onto a phosphor.

    摘要翻译: 本发明可以提供可用于医疗(2-D)X射线图像的精确记录的粒子检测器或成像器。 成像器包括至少一个检测器面板。 检测器面板包括具有新颖形式的像素电极阵列的微隙检测器。 每个像素电极通过绝缘层与平面阴极绝缘。 每个像素电极通过绝缘层中的通孔连接到下面的触点。 绝缘层优选与电极保持一致。 底层触点连接到电子测量元件,电子测量元件优选地位于电极下方并且与电极大约相同的尺寸。 测量元件可以是存储装置,数字计数器等。 开关晶体管连接到测量装置。 开关晶体管可以是薄膜晶体管。 或者,测量元件和晶体管都可以形成在单晶半导体中,例如, VLSI,以及由阵列中的几个检测器面板形成的完整成像器。 微隙检测器的漂移电极优选包括光电阴极。 光电阴极可以直接蒸发到磷光体上。