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公开(公告)号：US20110217848A1
公开(公告)日：2011-09-08
申请号：US12717079
申请日：2010-03-03
申请人： Eric J. Bergman , Jerry Dustin Leonhard , Bryan Puch , Jason Rye
发明人： Eric J. Bergman , Jerry Dustin Leonhard , Bryan Puch , Jason Rye
IPC分类号： H01L21/306
CPC分类号： H01L21/31133 , G03F7/42 , G03F7/423 , H01L21/67115 , H01L21/6719
摘要： A processing chamber successfully removes hardened photoresist via direct infrared radiation onto the wafer, in the presence of an acid such as sulfuric acid, optionally along with an oxidizer such as hydrogen peroxide. The processing chamber includes a fixture for holding and optionally rotating the wafer. An infrared irradiating assembly has infrared lamps outside of the processing chamber positioned to radiate infrared light into the processing chamber. The infrared lamps may be arranged to irradiate substantially the entire surface of a wafer on the rotor. A cooling assembly can be associated with the infrared radiating assembly to provide a quick cool down and avoid over-processing. Photoresist is removed using small amounts of chemical solutions.
摘要翻译： 处理室在酸例如硫酸存在下，任选地与氧化剂如过氧化氢成功地将硬化的光致抗蚀剂通过直接红外辐射除去到晶片上。 处理室包括用于保持和任选地旋转晶片的固定装置。 红外辐射组件具有位于处理室外面的红外灯，其被定位成将红外光辐射到处理室中。 红外灯可以被布置成基本上照射转子上的晶片的整个表面。 冷却组件可以与红外辐射组件相关联以提供快速冷却并避免过度处理。 使用少量化学溶液除去光刻胶。
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公开(公告)号：US20120289056A1
公开(公告)日：2012-11-15
申请号：US13452687
申请日：2012-04-20
IPC分类号： C09K13/06 , H01L21/302
CPC分类号： H01L21/31111 , C09K13/04 , C09K13/06
摘要： Methods and etchant solutions for etching silicon nitride on a workpiece are provided. One method generally includes exposing the workpiece to a chemistry mixture including phosphoric acid and a diluent, wherein the chemistry mixture has a water content of less than 10% by volume, and heating at least one of the workpiece and the chemistry mixture to a process temperature to etch silicon nitride from the workpiece.
摘要翻译： 提供了用于在工件上蚀刻氮化硅的方法和蚀刻剂溶液。 一种方法通常包括将工件暴露于包括磷酸和稀释剂的化学混合物，其中化学混合物的含水量小于10体积％，并将工件和化学混合物中的至少一种加热至工艺温度 以从工件中蚀刻氮化硅。
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