Distributed Potential Charged Particle Detector
    1.
    发明申请
    Distributed Potential Charged Particle Detector 有权
    分布式电位粒子检测器

    公开(公告)号:US20120037802A1

    公开(公告)日:2012-02-16

    申请号:US12854008

    申请日:2010-08-10

    Applicant: Eric Kneedler

    Inventor: Eric Kneedler

    Abstract: A charged particle beam system for imaging and processing targets is disclosed, comprising a charged particle column, a secondary particle detector, and a secondary particle detection grid assembly between the target and detector. In one embodiment, the grid assembly comprises a multiplicity of grids, each with a separate bias voltage, wherein the electric field between the target and the grids may be adjusted using the grid voltages to optimize the spatial distribution of secondary particles reaching the detector. Since detector lifetime is determined by the total dose accumulated at the area on the detector receiving the largest dose, detector lifetime can be increased by making the dose into the detector more spatially uniform. A single resistive grid assembly with a radial voltage gradient may replace the separate grids. A multiplicity of deflector electrodes may be located between the target and grid to enhance shaping of the electric field.

    Abstract translation: 公开了一种用于成像和处理目标的带电粒子束系统,包括带电粒子柱,二次粒子检测器和靶和检测器之间的二次粒子检测栅组件。 在一个实施例中,电网组件包括多个栅格,每个具有单独的偏置电压,其中可以使用电网电压来调整目标和栅极之间的电场,以优化到达检测器的次级颗粒的空间分布。 由于检测器寿命由在接收最大剂量的检测器上的区域累积的总剂量确定,所以可以通过使检测器的剂量在空间上更均匀地增加检测器寿命。 具有径向电压梯度的单个电阻栅组件可以替代单独的栅极。 多个偏转器电极可以位于靶和栅格之间以增强电场的形状。

    Charged particle detector
    3.
    发明授权
    Charged particle detector 有权
    带电粒子检测器

    公开(公告)号:US08907305B2

    公开(公告)日:2014-12-09

    申请号:US13816466

    申请日:2011-08-10

    Abstract: A charged particle beam system for imaging and processing targets is disclosed, comprising a charged particle column, a secondary particle detector, and a secondary particle detection grid assembly between the target and detector. In one embodiment, the grid assembly comprises a multiplicity of grids, each with a separate bias voltage, wherein the electric field between the target and the grids may be adjusted using the grid voltages to optimize the spatial distribution of secondary particles reaching the detector. Since detector lifetime is determined by the total dose accumulated at the area on the detector receiving the largest dose, detector lifetime can be increased by making the dose into the detector more spatially uniform. A single resistive grid assembly with a radial voltage gradient may replace the separate grids. A multiplicity of deflector electrodes may be located between the target and grid to enhance shaping of the electric field.

    Abstract translation: 公开了一种用于成像和处理目标的带电粒子束系统,包括带电粒子柱,二次粒子检测器和靶和检测器之间的二次粒子检测栅组件。 在一个实施例中,电网组件包括多个栅格,每个具有单独的偏置电压,其中可以使用电网电压来调整目标和栅极之间的电场,以优化到达检测器的次级颗粒的空间分布。 由于检测器寿命由在接收最大剂量的检测器上的区域累积的总剂量确定,所以可以通过使检测器的剂量在空间上更均匀地增加检测器寿命。 具有径向电压梯度的单个电阻栅组件可以替代单独的栅极。 多个偏转器电极可以位于靶和栅格之间以增强电场的形状。

    Stylus system for modifying small structures
    4.
    发明授权
    Stylus system for modifying small structures 有权
    用于修改小结构的触控笔系统

    公开(公告)号:US07375324B2

    公开(公告)日:2008-05-20

    申请号:US11104876

    申请日:2005-04-13

    CPC classification number: G03F1/72 G01Q80/00 Y10S977/856

    Abstract: An improved method for rapidly and accurately modifying small structures, including structures on a micron or nanometer scale, suitable for the repair of defects in lithographic photo-masks and semiconductors on a nano-scopic level. Features or samples repaired may be conductive or non-conductive. A single instrument can be employed to both observe the surface of the mask or wafer, and to effectuate the repair of conductive and non-conductive features thereon. Using a Stylus-Nano-Profilometer probe, rapid lateral strokes across the sample surface in a definable pattern at known high applied pressure are used to effectuate defect repair. The tip of the probe can also be dithered rapidly in a pattern or used as to create a jackhammer effect to more effectively remove material from the sample surface.

    Abstract translation: 一种用于快速和准确地修改小结构(包括微米或纳米级结构)的改进方法,适用于在纳米级别的光刻光掩模和半导体中修复缺陷。 维修的特征或样品可能是导电或不导电的。 可以使用单个仪器来观察掩模或晶片的表面,并且实现其上的导电和非导电特征的修复。 使用触笔 - 纳米轮廓仪探头,在已知的高施加压力下以可定义的模式在样品表面上快速横向冲程用于实现缺陷修复。 探针的尖端也可以以图案快速抖动,或用于产生手提锤效应以更有效地从样品表面去除材料。

    CHARGED PARTICLE DETECTOR
    5.
    发明申请
    CHARGED PARTICLE DETECTOR 有权
    充电颗粒检测器

    公开(公告)号:US20130214156A1

    公开(公告)日:2013-08-22

    申请号:US13816466

    申请日:2011-08-10

    Abstract: A charged particle beam system for imaging and processing targets is disclosed, comprising a charged particle column, a secondary particle detector, and a secondary particle detection grid assembly between the target and detector. In one embodiment, the grid assembly comprises a multiplicity of grids, each with a separate bias voltage, wherein the electric field between the target and the grids may be adjusted using the grid voltages to optimize the spatial distribution of secondary particles reaching the detector. Since detector lifetime is determined by the total dose accumulated at the area on the detector receiving the largest dose, detector lifetime can be increased by making the dose into the detector more spatially uniform. A single resistive grid assembly with a radial voltage gradient may replace the separate grids. A multiplicity of deflector electrodes may be located between the target and grid to enhance shaping of the electric field.

    Abstract translation: 公开了一种用于成像和处理目标的带电粒子束系统,包括带电粒子柱,二次粒子检测器和靶和检测器之间的二次粒子检测栅组件。 在一个实施例中,电网组件包括多个栅格,每个具有单独的偏置电压,其中可以使用电网电压来调整目标和栅极之间的电场,以优化到达检测器的次级颗粒的空间分布。 由于检测器寿命由在接收最大剂量的检测器上的区域累积的总剂量确定,所以可以通过使检测器的剂量在空间上更均匀地增加检测器寿命。 具有径向电压梯度的单个电阻栅组件可以替代单独的栅极。 多个偏转器电极可以位于靶和栅格之间以增强电场的形状。

    Distributed potential charged particle detector
    6.
    发明授权
    Distributed potential charged particle detector 有权
    分布式潜在带电粒子检测器

    公开(公告)号:US08481962B2

    公开(公告)日:2013-07-09

    申请号:US12854008

    申请日:2010-08-10

    Applicant: Eric Kneedler

    Inventor: Eric Kneedler

    Abstract: A charged particle beam system for imaging and processing targets is disclosed, comprising a charged particle column, a secondary particle detector, and a secondary particle detection grid assembly between the target and detector. In one embodiment, the grid assembly comprises a multiplicity of grids, each with a separate bias voltage, wherein the electric field between the target and the grids may be adjusted using the grid voltages to optimize the spatial distribution of secondary particles reaching the detector. Since detector lifetime is determined by the total dose accumulated at the area on the detector receiving the largest dose, detector lifetime can be increased by making the dose into the detector more spatially uniform. A single resistive grid assembly with a radial voltage gradient may replace the separate grids. A multiplicity of deflector electrodes may be located between the target and grid to enhance shaping of the electric field.

    Abstract translation: 公开了一种用于成像和处理目标的带电粒子束系统,包括带电粒子柱,二次粒子检测器和靶和检测器之间的二次粒子检测栅组件。 在一个实施例中,电网组件包括多个栅格,每个具有单独的偏置电压,其中可以使用电网电压来调整目标和栅极之间的电场,以优化到达检测器的次级颗粒的空间分布。 由于检测器寿命由在接收最大剂量的检测器上的区域累积的总剂量确定,所以可以通过使检测器的剂量在空间上更均匀地增加检测器寿命。 具有径向电压梯度的单个电阻栅组件可以替代单独的栅极。 多个偏转器电极可以位于靶和栅格之间以增强电场的形状。

    Stylus system for modifying small structures
    7.
    发明申请
    Stylus system for modifying small structures 有权
    用于修改小结构的触控笔系统

    公开(公告)号:US20050266586A1

    公开(公告)日:2005-12-01

    申请号:US11104876

    申请日:2005-04-13

    CPC classification number: G03F1/72 G01Q80/00 Y10S977/856

    Abstract: An improved method for rapidly and accurately modifying small structures, including structures on a micron or nanometer scale, suitable for the repair of defects in lithographic photo-masks and semiconductors on a nano-scopic level. Features or samples repaired may be conductive or non-conductive. A single instrument can be employed to both observe the surface of the mask or wafer, and to effectuate the repair of conductive and non-conductive features thereon. Using a Stylus-Nano-Profilometer probe, rapid lateral strokes across the sample surface in a definable pattern at known high applied pressure are used to effectuate defect repair. The tip of the probe can also be dithered rapidly in a pattern or used as to create a jackhammer effect to more effectively remove material from the sample surface.

    Abstract translation: 一种用于快速和准确地修改小结构(包括微米或纳米级结构)的改进方法,适用于在纳米级别的光刻光掩模和半导体中修复缺陷。 维修的特征或样品可能是导电或不导电的。 可以使用单个仪器来观察掩模或晶片的表面,并且实现其上的导电和非导电特征的修复。 使用触笔 - 纳米轮廓仪探头,在已知的高施加压力下以可定义的模式在样品表面上快速横向冲程用于实现缺陷修复。 探针的尖端也可以以图案快速抖动,或用于产生手提锤效应以更有效地从样品表面去除材料。

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