利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

5 条记录 (耗时 0.022 秒)

    Silicon-based visible and near-infrared optoelectric devices
    1.
    发明授权
    Silicon-based visible and near-infrared optoelectric devices 有权
    硅基可见光和近红外光电器件

    公开(公告)号：US07504702B2

    公开(公告)日：2009-03-17

    申请号：US11445900

    申请日：2006-06-02

    申请人： Eric Mazur ,  James Edward Carey, III

    发明人： Eric Mazur ,  James Edward Carey, III

    IPC分类号： H01L31/06

    CPC分类号： H01L31/02363 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/036 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/94

    摘要： In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

    摘要翻译： 一方面，本发明提供一种硅光电检测器，其具有掺杂有平均浓度在约0.5原子％至约1.5原子％范围内的硫夹杂物的表面层。 表面层与衬底的下面部分形成二极管结。 多个电触点允许向结点施加反向偏置电压，以便于响应于表面层的照射而产生电信号，例如光电流。 对于约250nm至约1050nm范围内的入射波长，光电探测器表现出大于约1A / W的响应度，对于较长波长（例如高达约3.5微米），响应度大于约0.1A / W。

    Silicon-based visible and near-infrared optoelectric devices
    3.
    发明授权
    Silicon-based visible and near-infrared optoelectric devices 有权
    硅基可见光和近红外光电器件

    公开(公告)号：US08080467B2

    公开(公告)日：2011-12-20

    申请号：US12776694

    申请日：2010-05-10

    申请人： James Edward Carey, III ,  Eric Mazur

    发明人： James Edward Carey, III ,  Eric Mazur

    IPC分类号： H01L21/26 ,  H01L21/42 ,  H01L21/44

    CPC分类号： H01L31/02363 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/036 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/94

    摘要： In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

    摘要翻译： 一方面，本发明提供一种硅光电检测器，其具有掺杂有平均浓度在约0.5原子％至约1.5原子％范围内的硫夹杂物的表面层。 表面层与衬底的下面部分形成二极管结。 多个电触点允许向结点施加反向偏置电压，以便于响应于表面层的照射而产生电信号，例如光电流。 对于约250nm至约1050nm范围内的入射波长，光电探测器表现出大于约1A / W的响应度，对于较长波长（例如高达约3.5微米），响应度大于约0.1A / W。

    Manufacture of silicon-based devices having disordered sulfur-doped surface layers
    4.
    发明授权
    Manufacture of silicon-based devices having disordered sulfur-doped surface layers 有权
    具有无序硫掺杂表面层的硅基器件的制造

    公开(公告)号：US07354792B2

    公开(公告)日：2008-04-08

    申请号：US10950248

    申请日：2004-09-24

    申请人： James Edward Carey, III ,  Eric Mazur

    发明人： James Edward Carey, III ,  Eric Mazur

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1864 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/268 ,  H01L31/02363 ,  H01L31/0288 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.

    摘要翻译： 本发明提供了通过多个时间短的激光脉冲（例如飞秒脉冲）照射硅衬底（例如，n掺杂晶体硅）的至少一个表面位置来制造辐射吸收半导体晶片的方法，同时曝光 该物质的位置，例如具有给电子成分的物质，例如SF 6，以产生基本上无序的表面层（即，微结构化层），其包含该给电子成分的浓度 ，例如硫。 衬底也在升高的温度下退火并持续一段选择以增强表面层中的电荷载流子密度。 例如，衬底可以在约700K至约900K的范围内的温度下退火。