公开(公告)号：US09579090B1

公开(公告)日：2017-02-28

申请号：US14189221

申请日：2014-02-25

申请人： Eric Simms ,  Joseph Young ,  Jordan Vance

发明人： Eric Simms ,  Joseph Young ,  Jordan Vance

IPC分类号： A61B18/00 ,  A61B17/00 ,  A61B18/08 ,  A61B17/34

CPC分类号： A61B17/00234 ,  A61B17/29 ,  A61B2017/00464 ,  A61B2017/00876 ,  A61B2017/3445

摘要： The present invention provides a multi-function laparoscopic surgical instrument that meets niche needs in the expanding field of Minimally Invasive Surgery (MIS). A preferred embodiment of the present invention comprises a sheath that may be inserted into a patient, wherein the sheath contains at least two interchangeable surgical instruments that may be advanced into or retracted from the patient through a single outlet in the sheath. It is intended for use in laparoscopic and thoracoscopic surgical procedures, including intra-abdominal, intra-thoracic, intra-pelvic and arthroscopic MIS procedures, and is particularly well suited to single incision laparoscopic surgery and Natural Orifice Translumenal Endoscopic Surgery (NOTES).

摘要翻译： 本发明提供了一种多功能腹腔镜手术器械，其满足微创外科（MIS）扩大领域的特殊需要。 本发明的优选实施例包括可以插入到患者体内的护套，其中护套包含至少两个可互换的手术器械，其可以通过护套中的单个出口进入或从患者中退出。 它适用于腹腔镜和胸腔镜手术，包括腹腔内，胸内，骨盆内和关节镜下的MIS手术，特别适用于单切口腹腔镜手术和天然门静脉内镜手术（NOTES）。

公开(公告)号：US20050239289A1

公开(公告)日：2005-10-27

申请号：US11159772

申请日：2005-06-23

申请人： Nilesh Doke ,  Chad Kaneshige ,  John Campbell ,  Eric Simms ,  Manoj Jain

发明人： Nilesh Doke ,  Chad Kaneshige ,  John Campbell ,  Eric Simms ,  Manoj Jain

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768 ,  H01L21/302 ,  B44C1/22

CPC分类号： H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： Post chemical mechanical polishing (CMP) cleaning methods are disclosed which reduce integrated circuit defects. A corrosion inhibitor is preferably applied during the post-CMP cleaning steps after application of a first chemistry. Subsequent to the application of the corrosion inhibitor a rinsing step using deionized water is employed. In this manner, the corrosion inhibitor applied during the post-CMP clean fills voids created in previous passivation layers by previous chemistries. Also, existing post-CMP equipment may be used to implement the preferred embodiments of the present invention. Preferably the corrosion inhibitor applied during the post-CMP clean is benzotriazole (BTA).

摘要翻译： 公开了后化学机械抛光（CMP）清洁方法，其减少集成电路缺陷。 在施加第一化学品后的CMP后的清洗步骤中优选使用腐蚀抑制剂。 在施用腐蚀抑制剂之后，使用使用去离子水的漂洗步骤。 以这种方式，在CMP后清洁中施加的腐蚀抑制剂填充由先前化学物质在先前钝化层中产生的空隙。 此外，现有的后CMP设备可以用于实现本发明的优选实施例。 优选地，后CMP清洁期间施加的腐蚀抑制剂是苯并三唑（BTA）。