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1.发明申请Support Ring For Supporting A Semiconductor Wafer Composed Of Monocrystalline Silicon During A Thermal Treatment, Method For The Thermal Treatment of Such A Semiconductor Wafer, and Thermally Treated Semiconductor Wafer Composed of Monocrystalline Silicon 有权用于支持在热处理期间由单晶硅组成的半导体晶片的支撑环，这种半导体晶片的热处理方法和由单晶硅组成的热处理的半导体晶片公开(公告)号：US20120098100A1
公开(公告)日：2012-04-26
申请号：US13274456
申请日：2011-10-17
申请人： Erich Daub , Raimund Kaiss , Michael Kloesler , Thomas Loch
发明人： Erich Daub , Raimund Kaiss , Michael Kloesler , Thomas Loch
CPC分类号： H01L21/68735 , C30B29/06 , C30B33/02 , H01L21/3225 , Y10T117/10 , Y10T117/1016
摘要： A support ring for supporting a monocrystalline silicon semiconductor wafer during a thermal treatment of the semiconductor wafer has outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface, this curved surface serving for the placement of the semiconductor wafer. The curved surface has a radius of curvature of not less than 6000 mm and not more than 9000 mm for 300 mm diameter wafers, or a radius of curvature of not less than 9000 mm and not more than 14,000 mm for 450 mm diameter wafers. Use of the support ring during thermal treatment reduces slip and improves wafer nanotopography.
摘要翻译： 用于在半导体晶片的热处理期间支撑单晶硅半导体晶片的支撑环具有外表面和内侧表面以及从外侧表面延伸到内侧表面的弯曲表面，该弯曲表面用于放置半导体 晶圆。 对于300mm直径的晶片，曲面的曲率半径不小于6000mm，不大于9000mm，对于450mm直径的晶片，曲面的曲率半径不小于9000mm且不大于14,000mm。 热处理期间支撑环的使用减少了滑移并改善了晶片的纳米形貌。
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2.发明授权Support ring for supporting a semiconductor wafer composed of monocrystalline silicon during a thermal treatment, method for the thermal treatment of such a semiconductor wafer, and thermally treated semiconductor wafer composed of monocrystalline silicon 有权用于在热处理期间支撑由单晶硅构成的半导体晶片的支撑环，用于这种半导体晶片的热处理的方法，以及由单晶硅构成的热处理半导体晶片公开(公告)号：US08460465B2
公开(公告)日：2013-06-11
申请号：US13274456
申请日：2011-10-17
申请人： Erich Daub , Raimund Kaiss , Michael Kloesler , Thomas Loch
发明人： Erich Daub , Raimund Kaiss , Michael Kloesler , Thomas Loch
CPC分类号： H01L21/68735 , C30B29/06 , C30B33/02 , H01L21/3225 , Y10T117/10 , Y10T117/1016
摘要： A support ring for supporting a monocrystalline silicon semiconductor wafer during a thermal treatment of the semiconductor wafer has outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface, this curved surface serving for the placement of the semiconductor wafer. The curved surface has a radius of curvature of not less than 6000 mm and not more than 9000 mm for 300 mm diameter wafers, or a radius of curvature of not less than 9000 mm and not more than 14,000 mm for 450 mm diameter wafers. Use of the support ring during thermal treatment reduces slip and improves wafer nanotopography.
摘要翻译： 用于在半导体晶片的热处理期间支撑单晶硅半导体晶片的支撑环具有外表面和内侧表面以及从外侧表面延伸到内侧表面的弯曲表面，该弯曲表面用于放置半导体 晶圆。 对于300mm直径的晶片，曲面的曲率半径不小于6000mm，不大于9000mm，对于450mm直径的晶片，曲面的曲率半径不小于9000mm且不大于14,000mm。 热处理期间支撑环的使用减少了滑移并改善了晶片的纳米形貌。
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