公开(公告)号：US20060252171A1

公开(公告)日：2006-11-09

申请号：US11350751

申请日：2006-02-10

申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC分类号： H01L21/00 ,  A61B1/04 ,  H04N7/18

CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

公开(公告)号：US08354286B2

公开(公告)日：2013-01-15

申请号：US10758136

申请日：2004-01-16

申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC分类号： H01L21/00

CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

摘要翻译： 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。 该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在 具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。 硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。 此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

公开(公告)号：US20120161159A9

公开(公告)日：2012-06-28

申请号：US10758136

申请日：2004-01-16

申请人： Eun-Kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

发明人： Eun-Kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC分类号： H01L21/00 ,  H01L27/15 ,  H01L33/00 ,  H01L31/12

CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

摘要翻译： 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。 该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在 具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。 硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。 此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

公开(公告)号：US07750353B2

公开(公告)日：2010-07-06

申请号：US11350751

申请日：2006-02-10

申请人： Eun-kyung Lee ,  Byoung-Iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

发明人： Eun-kyung Lee ,  Byoung-Iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC分类号： H01L21/00

CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

公开(公告)号：US07754508B2

公开(公告)日：2010-07-13

申请号：US11335503

申请日：2006-01-20

申请人： Eun-kyung Lee ,  Byoung-iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

发明人： Eun-kyung Lee ,  Byoung-iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC分类号： H01L21/00

CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

摘要翻译： 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。 该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在 具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。 硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。 此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

公开(公告)号：US20060115916A1

公开(公告)日：2006-06-01

申请号：US11335503

申请日：2006-01-20

申请人： Eun-kyung Lee ,  Byoung-iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

发明人： Eun-kyung Lee ,  Byoung-iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC分类号： H01L21/00

CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

摘要翻译： 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。 该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在 具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。 硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。 此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

公开(公告)号：US07372197B2

公开(公告)日：2008-05-13

申请号：US11059437

申请日：2005-02-17

申请人： Pil-soo Ahn ,  Hang-woo Lee

发明人： Pil-soo Ahn ,  Hang-woo Lee

IPC分类号： H01J1/30

CPC分类号： H01J29/04 ,  H01J3/021 ,  H01J29/481 ,  H01J31/127 ,  H01J2329/0407

摘要： A field emission device and a field emission display (FED) having dual cathode electrodes. The field emission device includes a substrate; a first cathode electrode formed on the substrate; a cathode insulating layer formed on the first cathode electrode, and having a first cavity that exposes a portion of the first cathode electrode; an electron emission source disposed on the first cathode electrode and being exposed by the first cavity; a second cathode electrode formed on the cathode insulating layer, and including a cathode hole aligned with the first cavity; a gate insulating layer formed on the second cathode electrode, and having a second cavity aligned with the first cavity; and a gate electrode formed on the gate insulating layer, and having a gate hole aligned with the second cavity.

摘要翻译： 具有双阴极电极的场发射器件和场致发射显示器（FED）。 场致发射器件包括衬底; 形成在所述基板上的第一阴极电极; 阴极绝缘层，形成在所述第一阴极电极上，并且具有暴露所述第一阴极电极的一部分的第一腔; 电子发射源，设置在第一阴极电极上并被第一腔暴露; 形成在所述阴极绝缘层上的第二阴极，并且包括与所述第一腔对准的阴极孔; 栅极绝缘层，形成在所述第二阴极电极上，并且具有与所述第一空腔对准的第二空腔; 以及形成在所述栅极绝缘层上并具有与所述第二腔对准的栅极孔的栅电极。

公开(公告)号：US20050194887A1

公开(公告)日：2005-09-08

申请号：US11059437

申请日：2005-02-17

申请人： Pil-soo Ahn ,  Hang-woo Lee

发明人： Pil-soo Ahn ,  Hang-woo Lee

IPC分类号： H01J1/304 ,  H01J1/62 ,  H01J63/04

CPC分类号： H01J29/04 ,  H01J3/021 ,  H01J29/481 ,  H01J31/127 ,  H01J2329/0407

摘要： A field emission device and a field emission display (FED) having dual cathode electrodes. The field emission device includes a substrate; a first cathode electrode formed on the substrate; a cathode insulating layer formed on the first cathode electrode, and having a first cavity that exposes a portion of the first cathode electrode; an electron emission source disposed on the first cathode electrode and being exposed by the first cavity; a second cathode electrode formed on the cathode insulating layer, and including a cathode hole aligned with the first cavity; a gate insulating layer formed on the second cathode electrode, and having a second cavity aligned with the first cavity; and a gate electrode formed on the gate insulating layer, and having a gate hole aligned with the second cavity.

摘要翻译： 具有双阴极电极的场发射器件和场致发射显示器（FED）。 场致发射器件包括衬底; 形成在所述基板上的第一阴极电极; 阴极绝缘层，形成在所述第一阴极电极上，并且具有暴露所述第一阴极电极的一部分的第一腔; 电子发射源，设置在第一阴极电极上并被第一腔暴露; 形成在所述阴极绝缘层上的第二阴极，并且包括与所述第一腔对准的阴极孔; 栅极绝缘层，形成在所述第二阴极电极上，并且具有与所述第一空腔对准的第二空腔; 以及形成在所述栅极绝缘层上并具有与所述第二腔对准的栅极孔的栅电极。

公开(公告)号：US20080003916A1

公开(公告)日：2008-01-03

申请号：US11798481

申请日：2007-05-14

申请人： Shang-hyeun Park ,  Hang-woo Lee ,  You-jong Kim ,  Pil-soo Ahn

发明人： Shang-hyeun Park ,  Hang-woo Lee ,  You-jong Kim ,  Pil-soo Ahn

IPC分类号： H01J9/04

CPC分类号： B82Y10/00 ,  H01J3/022 ,  H01J9/025

摘要： Provided is a field emission device using carbon nanotubes. The field emission device includes a substrate, a cathode, a gate insulating layer, an electron emitter, and a gate electrode. The cathode is formed on the substrate. The gate insulating layer is formed on the cathode and has a well exposing a portion of the cathode. The electron emitter is formed on the exposed portion of the cathode. The gate electrode is formed on the gate insulating layer and has a gate hole corresponding to the well. The gate electrode further includes a cylindrical electrode part that forms a focusing electric field from the gate hole toward a proceeding path of an electron beam. Accordingly, a focusing electric field can be formed around an electron beam emitted from the electron emitter so as to converge and focus the electron beam passing through the focusing electric field. As a result, color purity, brightness, and durability can be improved.

摘要翻译： 提供了使用碳纳米管的场致发射器件。 场致发射器件包括衬底，阴极，栅极绝缘层，电子发射体和栅电极。 阴极形成在基板上。 栅绝缘层形成在阴极上并具有暴露阴极的一部分的良好的孔。 电子发射体形成在阴极的暴露部分上。 栅电极形成在栅极绝缘层上并具有与阱对应的栅极孔。 栅电极还包括圆柱形电极部分，其从门孔朝向电子束的前进路径形成聚焦电场。 因此，可以在从电子发射体发射的电子束周围形成聚焦电场，以使通过聚焦电场的电子束会聚并聚焦。 结果，可以提高色纯度，亮度和耐久性。

公开(公告)号：US07843622B2

公开(公告)日：2010-11-30

申请号：US12318500

申请日：2008-12-30

申请人： Pil-soo Ahn

发明人： Pil-soo Ahn

IPC分类号： G02F1/09 ,  G02F1/295

CPC分类号： G02F1/09 ,  G02F1/091 ,  G02F2201/346 ,  G02F2203/055

摘要： An active optical filter transmits or blocks light according to whether or not a magnetic field is applied, and functions as an optical filter transmitting light having a predetermined wavelength when light is transmitted according to a magnetic field. The active optical filter includes: an optical filter layer for transmitting or blocking light according to whether or not a magnetic field is applied; and a magnetic field applying unit surrounding the optical filter layer for applying a magnetic field to the optical filter layer. The optical filter layer has a multi-layer thin layer structure which is formed of two kinds of thin layers having different respective refractive indices and sequentially and periodically stacked on a substrate.

摘要翻译： 有源光学滤波器根据是否施加磁场来发射或阻挡光，并且当根据磁场发射光时，起到传输具有预定波长的光的光学滤波器的作用。 有源滤光器包括：根据是否施加磁场来发射或遮挡光的滤光层; 以及围绕光学滤光层的磁场施加单元，用于向光学滤光层施加磁场。 滤光层具有多层薄层结构，其由具有不同折射率的两种薄层形成，并且依次且周期性地堆叠在基板上。