公开(公告)号：US20210359201A1

公开(公告)日：2021-11-18

申请号：US17285122

申请日：2019-10-29

Applicant: Everspin Technologies, Inc.

Inventor： Jijun SUN ,  Han-Jong CHIA ,  Sarin DESHPANDE ,  Ahmet DEMIRAY

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02

Abstract: A magnetoresistive stack includes a fixed magnetic region, one or more dielectric layers disposed on and in contact with the fixed magnetic region, and a free magnetic region disposed above the one or mom dielectric layers. The fixed magnetic region may include a first ferromagnetic region, a coupling layer, a second ferromagnetic region, a transition layer disposed, a reference layer, and at least one interfacial layer disposed above the second ferromagnetic region. Another interfacial layer may be disposed between the one or more dielectric layers and the free magnetic region.