公开(公告)号：US20190173004A1

公开(公告)日：2019-06-06

申请号：US16202496

申请日：2018-11-28

Applicant: Everspin Technologies, Inc.

Inventor： Sarin A. DESHPANDE ,  Jon SLAUGHTER ,  Cong HAI ,  Hyunwoo YANG ,  Naganivetha THIYAGARAJAH ,  Shukai YE

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

Abstract: A method of fabricating a magnetoresistive device includes etching a magnetoresistive stack using a first etching process to form one or more sidewalls, and etching the stack using a second etching process after forming the one or more sidewalls. Wherein, the second etching process may be relatively more isotropic than the first etching process.