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    METHODS AND DEVICES FOR HEALING RESET ERRORS IN A MAGNETIC MEMORY
    5.
    发明申请
    METHODS AND DEVICES FOR HEALING RESET ERRORS IN A MAGNETIC MEMORY 审中-公开

    公开(公告)号：US20190087250A1

    公开(公告)日：2019-03-21

    申请号：US16174557

    申请日：2018-10-30

    Applicant: Everspin Technologies, Inc.

    Inventor： Jon SLAUGHTER ,  Dimitri HOUSSAMEDDINE ,  Thomas ANDRE ,  Syed M. ALAM

    IPC: G06F11/07 ,  G11C11/16

    Abstract: A method is provided for healing reset errors for a magnetic memory using destructive read with selective write-back, including for example, a self-referenced read of spin-torque bits in an MRAM. Memory cells are prepared for write back by one of identifying memory cells determined in error using an error correcting code and inverting the inversion bit for those memory cells determined in error identifying memory cells determined in error using an error correcting code and resetting a portion of the memory cells to the first state; and resetting one or more memory cells to the first state.

    MAGNETIC FIELD SENSOR AND METHOD OF MANUFACTURE
    6.
    发明申请
    MAGNETIC FIELD SENSOR AND METHOD OF MANUFACTURE 审中-公开

    公开(公告)号：US20190064288A1

    公开(公告)日：2019-02-28

    申请号：US15685085

    申请日：2017-08-24

    Applicant: Everspin Technologies, Inc.

    Inventor： Jon SLAUGHTER

    IPC: G01R33/09

    Abstract: A magnetic field sensor that includes a differential bridge in which each path of the bridge includes a first type of magnetic field sensing device and a second type of magnetic field sensing device. The first and second types of magnetic field sensing devices differ in the magnetic moment imbalance present in the synthetic antiferromagnets (SAFs) included in their reference layers such that that different types of devices produce a different response to perpendicular magnetic fields, but the same response to in-plane magnetic fields. Such different magnetic moment imbalances in the SAFs of magnetic field sensing devices included in a bridge allow for accurate sensing of perpendicular magnetic fields in a differential manner that also cancels out interference from in-plane fields. Techniques for producing such magnetic field sensing devices on an integrated circuit are also presented. Moreover, the free layers within the magnetic field sensing devices can be adjusted in terms of their sensitivity range and level of sensitivity by manipulating the kink filed (Hk) for those free layers.

    Magnetic field sensor
    7.
    发明申请
    Magnetic field sensor 有权
    磁场传感器

    公开(公告)号：US20160163962A1

    公开(公告)日：2016-06-09

    申请号：US15041178

    申请日：2016-02-11

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： Phillip MATHER ,  Jon SLAUGHTER ,  Nicholas RIZZO

    IPC: H01L43/02

    CPC classification number: H01L43/02 ,  G01R33/098 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic sensor includes a plurality of groups, each group comprising a plurality of magnetic tunnel junction (MTJ) devices having a plurality of conductors configured to couple the MTJ devices within one group in parallel and the groups in series enabling independent optimization of the material resistance area (RA) of the MTJ and setting total device resistance so that the total bridge resistance is not so high that Johnson noise becomes a signal limiting concern, and yet not so low that CMOS elements may diminish the read signal. Alternatively, the magnetic tunnel junction devices within each of at least two groups in series and the at least two groups in parallel resulting in the individual configuration of the electrical connection path and the magnetic reference direction of the reference layer, leading to independent optimization of both functions, and more freedom in device design and layout. The X and Y pitch of the sense elements are arranged such that the line segment that stabilizes, for example, the right side of one sense element; also stabilizes the left side of the adjacent sense element.

    Abstract translation: 磁传感器包括多个组，每个组包括多个磁隧道结（MTJ）装置，其具有多个导体，其被配置成并联连接一组内的MTJ装置，并且该组可串联实现材料电阻的独立优化 面积（RA），并设置总的器件电阻，使得总的桥接电阻不是很高，以至于Johnson噪声成为限制信号的关键，而不是那么低，使得CMOS元件可能会削弱读取信号。 或者，串联的至少两组中的每一个中的磁隧道结装置和并联的至少两个组，导致电连接路径的单独配置和参考层的磁参考方向，导致两者的独立优化 功能，以及更多设备设计和布局自由。 感测元件的X和Y间距被布置成使得例如稳定一个感测元件的右侧的线段; 也稳定了相邻感测元件的左侧。

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