公开(公告)号：US20240306513A1

公开(公告)日：2024-09-12

申请号：US18664928

申请日：2024-05-15

Applicant: Everspin Technologies, Inc.

Inventor： Sanjeev AGGARWAL ,  Sarin DESHPANDE ,  Kerry NAGLE ,  Santosh KARRE

IPC: H10N50/01 ,  H01F10/32 ,  H10B61/00 ,  H10N50/80

CPC classification number: H10N50/01 ,  H10N50/80 ,  H01F10/3254 ,  H01F10/3272 ,  H10B61/00

Abstract: A magnetoresistive element may include a via providing an electrical connection between one or more metal regions and magnetoresistive devices. The via may include a transition metal layer, a tantalum-rich layer, and/or a cap layer. The transition metal layer may be formed by atomic layer deposition. Additionally, one or more layers of the via may be formed in the trench etched in one or more interlevel dielectric layers. The via may have an aspect ratio less than or equal to 2. The via may have a diameter less than or equal than a diameter of the magnetoresistive device electrically connected to one or more metal regions by the via.