公开(公告)号：US20250113741A1

公开(公告)日：2025-04-03

申请号：US18897637

申请日：2024-09-26

Applicant: Everspin Technologies, Inc.

Inventor： Sumio IKEGAWA ,  Kerry Joseph NAGEL ,  Raj KUMAR ,  Syed M. ALAM

IPC: H10N50/10 ,  H10B61/00 ,  H10N50/01

Abstract: A magnetoresistive random-access memory (MRAM) device includes a magnetoresistive tunnel junction (MTJ) device, an electrode, and a coupling layer. The MTJ device includes a free layer, a fixed layer, and a tunnel barrier layer positioned between the free layer and the fixed layer. The coupling layer is positioned between and coupling the electrode and the MTJ device. The coupling layer includes spin Hall channel (SHC) material. The free layer, the fixed layer, and the tunnel barrier layer are stacked in a first direction to form MTJ device. The electrode is nonaligned with the MTJ device such that the electrode is spaced away from the MTJ in a second direction that is different from the first direction.