3D DEFECT CHARACTERIZATION OF CRYSTALLINE SAMPLES IN A SCANNING TYPE ELECTRON MICROSCOPE

    公开(公告)号:US20200013581A1

    公开(公告)日:2020-01-09

    申请号:US16119017

    申请日:2018-08-31

    申请人: FEI Company

    摘要: The invention relates to a method 3D defect characterization of crystalline samples in a scanning type electron microscope. The method comprises Irradiating a sample provided on a stage, selecting one set of crystal lattice planes of the sample and orienting said set to a first Bragg condition with respect to a primary electron beam impinging on said sample, and obtaining Electron Channeling Contrast Image for an area of interest on the sample. The method is characterized by performing, at least once, the steps of orienting said selected set of crystal lattice planes to a further Bragg condition by at least tilting the sample stage with the sample by a user-selected angle about a first tilt axis, and obtaining by Electron Channeling Contrast Image for a further area of interest.