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公开(公告)号：US20140166907A1
公开(公告)日：2014-06-19
申请号：US14103381
申请日：2013-12-11
发明人： Dong-Gun LEE , Eok-Bong KIM , Jong-Ju PARK , Seong-Sue KIM
IPC分类号： H05G2/00
摘要： An apparatus and a method for generating extreme ultra violet radiation are provided. The apparatus for generating extreme ultra violet radiation includes a light source, a first reflecting mirror on which source light emitted from the light source is incident, a second reflecting mirror on which first reflected light reflected by the first reflecting mirror is incident, a focus mirror on which second reflected light reflected by the second reflecting mirror is incident, the focus mirror reflecting third reflected light back to the second reflecting mirror, and a gas cell on which fourth reflected light reflected by the second reflecting mirror is incident.
摘要翻译： 提供了一种用于产生极紫外辐射的装置和方法。 用于产生极紫外线辐射的装置包括光源，从光源发射的光源入射的第一反射镜，由第一反射镜反射的第一反射光入射的第二反射镜，聚焦反射镜 在第二反射镜反射的第二反射光入射到其上的情况下，将第三反射光反射回第二反射镜的聚焦镜和由第二反射镜反射的第四反射光入射的气室。
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2.发明申请REFLECTIVE EXTREME ULTRAVIOLET MASK AND METHOD OF FORMING A PATTERN USING THE SAME 有权反射极限超紫外线掩模及其形成图案的方法公开(公告)号：US20130288166A1
公开(公告)日：2013-10-31
申请号：US13918693
申请日：2013-06-14
发明人： Dong-gun LEE , Seong-Sue KIM , Tae-Geun KIM
IPC分类号： G03F1/24
摘要： According to example embodiments, a reflective EUV mask may include a mask substrate, a patterned structure and a non-patterned structure on the mask substrate. At least one of the patterned structure and the non-patterned structure may include a thermally treated region configured to reduce a reflectivity of the respective patterned and non-patterned structure.
摘要翻译： 根据示例实施例，反射型EUV掩模可以包括掩模基板，图案化结构和掩模基板上的非图案化结构。 图案化结构和非图案化结构中的至少一个可以包括被配置为减少相应的图案化和非图案化结构的反射率的热处理区域。
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