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公开(公告)号：US20170244010A1
公开(公告)日：2017-08-24
申请号：US15362966
申请日：2016-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung-sub KIM , Yong-il KIM , Dong-gun LEE , Kyung-wook HWANG , Jin-sub LEE , Min-gyeong GWON
CPC classification number: H01L33/58 , G02B5/208 , H01L25/0753 , H01L33/0079 , H01L33/06 , H01L33/32 , H01L33/44 , H01L33/504 , H01L33/508 , H01L33/56 , H01L33/60 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A light-emitting device package includes a plurality of luminescent structures arranged spaced apart from each other in a horizontal direction, an intermediate layer on the plurality of luminescent structures, and wavelength conversion layers on the intermediate layer, the wavelength conversion layers vertically overlapping separate, respective luminescent structures of the plurality of luminescent structures. The intermediate layer may include a plurality of layers, the plurality of layers associated with different refractive indexes, respectively. The intermediate layer may include a plurality of sets of holes, each set of holes may include a separate plurality of holes, and each wavelength conversion layer may vertically overlap a separate set of holes on the intermediate layer.
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公开(公告)号：US20200027917A1
公开(公告)日：2020-01-23
申请号：US16244882
申请日：2019-01-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Joo-sung KIM , Jong-uk SEO , Dong-gun LEE , Young-jo TAK
Abstract: A light emitting device package includes a cell array having a first surface and a second surface located opposite to the first surface and including, on a portion of a horizontal extension line of the first surface, semiconductor light emitting units each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially located on a layer surface including a sidewall of the first conductivity type semiconductor layer; wavelength converting units corresponding respectively to the semiconductor light emitting units and each arranged corresponding to the first conductivity type semiconductor layer; a barrier structure arranged between the wavelength converting units corresponding to the cell array; and switching units arranged in the barrier structure and electrically connected to the semiconductor light emitting units.
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Patent Agency Ranking
3.发明申请公开(公告)号：US20190393279A1
公开(公告)日：2019-12-26
申请号：US16383839
申请日：2019-04-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-gun LEE , Joo-sung Kim , Jong-uk Seo , Young-jo Tak
Abstract: A light-emitting device package is provided. The light-emitting device package includes: a substrate having a first surface and a second surface, and having a first opening and a second opening spaced apart from each other; a light-emitting structure disposed on the first surface of the substrate and vertically overlapping the first opening; and an image sensor including a photoelectric conversion region, the photoelectric conversion region being disposed in the substrate and vertically overlapping the second opening. Light from the light-emitting structure is emitted toward the second surface of the substrate through the first opening.
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4.发明申请REFLECTIVE EXTREME ULTRAVIOLET MASK AND METHOD OF FORMING A PATTERN USING THE SAME 有权反射极限超紫外线掩模及其形成图案的方法公开(公告)号：US20130288166A1
公开(公告)日：2013-10-31
申请号：US13918693
申请日：2013-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-gun LEE , Seong-Sue KIM , Tae-Geun KIM
IPC: G03F1/24
Abstract: According to example embodiments, a reflective EUV mask may include a mask substrate, a patterned structure and a non-patterned structure on the mask substrate. At least one of the patterned structure and the non-patterned structure may include a thermally treated region configured to reduce a reflectivity of the respective patterned and non-patterned structure.
Abstract translation: 根据示例实施例，反射型EUV掩模可以包括掩模基板，图案化结构和掩模基板上的非图案化结构。 图案化结构和非图案化结构中的至少一个可以包括被配置为减少相应的图案化和非图案化结构的反射率的热处理区域。
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5.发明申请PHOTOMASK, METHOD OF CORRECTING ERROR THEREOF, INTEGRATED CIRCUIT DEVICE MANUFACTURED BY USING THE PHOTOMASK, AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT DEVICE 审中-公开照相机，校正其错误的方法，使用光电产生的集成电路装置以及制造集成电路装置的方法公开(公告)号：US20160377973A1
公开(公告)日：2016-12-29
申请号：US15258163
申请日：2016-09-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-hyun KIM , Seong-sue KIM , Dong-gun LEE
IPC: G03F1/24
Abstract: Provided are photomask and a method of correcting errors thereof. The photomask includes a multilayer reflection film covering one side surface of a substrate and an energy receiving layer covering the other side surface of the substrate. The method includes determining a local correction position on a frontside surface of the photomask according to a detected error of the photomask, and locally applying an energy beam to a backside surface region of the photomask aligned with the local correction position in a thickness direction of the photomask. The invention may be applicable to structures other than photomasks that benefit from modification of surface heights or selectively applied stress.
Abstract translation: 提供光掩模和校正其错误的方法。 光掩模包括覆盖基板的一个侧表面的多层反射膜和覆盖基板的另一侧表面的能量接收层。 该方法包括根据检测到的光掩模误差确定光掩模的前表面上的局部校正位置，并将能量束局部地施加到与沿局部校正位置的局部校正位置对准的光掩模的背侧表面区域 光掩模 本发明可以应用于受到表面高度的改变或选择性施加的应力的光掩模以外的结构的影响。
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公开(公告)号：US20150131071A1
公开(公告)日：2015-05-14
申请号：US14534340
申请日：2014-11-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-wan KIM , Seong-sue KIM , Chang-young JEONG , Dong-gun LEE
IPC: H01L21/68 , H01L21/687 , H01L21/673 , H01L21/683
CPC classification number: G03F7/70741 , G03F1/142 , G03F1/64 , G03F7/707 , G03F7/70983 , H01L21/67359
Abstract: A semiconductor device manufacturing apparatus includes a mask stage including a mask holder system that fixes a photomask, the mask holder system having a first fixing portion mounted at a first position of the mask holder system to fix the photomask, and a second fixing portion at a second position of the mask holder system and spaced apart from the first position, the second fixing portion fixing a pellicle assembly to be spaced apart from the photomask on the first fixing portion.
Abstract translation: 半导体器件制造装置包括掩模台，其包括固定光掩模的掩模保持器系统，所述掩模保持器系统具有安装在所述掩模保持器系统的第一位置处的第一固定部分以固定所述光掩模;以及第二固定部， 所述第二固定部分固定在所述第一固定部分上与所述光掩模间隔开的防护薄膜组件。
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公开(公告)号：US20140166906A1
公开(公告)日：2014-06-19
申请号：US14077292
申请日：2013-11-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eok-bong KIM , Jong-ju PARK , Dong-gun LEE , Seong-sue KIM
IPC: G21K5/04
Abstract: An extreme ultra violet (EUV) generation device includes a light source for outputting laser beam, a pulse width compression system for compressing a pulse width of the laser beam, a gas cell for receiving the laser beam having the compressed pulse width incident from the pulse width compression system and generating EUV light, and a vacuum chamber housing the pulse width compression system and the gas cell.
Abstract translation: 极紫外（EUV）产生装置包括用于输出激光束的光源，用于压缩激光束的脉冲宽度的脉冲宽度压缩系统，用于接收从脉冲入射的具有压缩脉冲宽度的激光束的气室 宽度压缩系统和产生EUV灯，以及容纳脉冲宽度压缩系统和气室的真空室。
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