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公开(公告)号：US10431709B2
公开(公告)日：2019-10-01
申请号：US16144636
申请日：2018-09-27
IPC分类号： H01L31/18 , H01L21/02 , H01L31/032 , H01L31/0749 , H01L31/0445 , H01L31/0224 , H01L31/0352 , H01L31/0392
摘要： A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
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公开(公告)号：US10396218B2
公开(公告)日：2019-08-27
申请号：US15510473
申请日：2015-09-02
IPC分类号： H01L31/0216 , H01L21/02 , H01L31/0232 , H01L31/04 , H01L27/142 , B81C1/00 , H01L31/032
摘要： A method (200) for fabricating patterns on the surface of a layer of a device (100), the method comprising: providing at least one layer (130, 230); adding at least one alkali metal (235); controlling the temperature (2300) of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings (1300, 1305) at the surface of the layer. The method further comprises forming cavities (236, 1300) by dissolving the alkali compound embossings. The method (200) is advantageous for nanopatterning of devices (100) without using templates and for the production of high efficiency optoelectronic thin-film devices (100).
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公开(公告)号：US10109761B2
公开(公告)日：2018-10-23
申请号：US15312718
申请日：2015-05-21
IPC分类号： H01L31/18 , H01L31/0392 , H01L31/032 , H01L31/0445 , H01L31/0352 , H01L31/0224
摘要： A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
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公开(公告)号：US10672941B2
公开(公告)日：2020-06-02
申请号：US16547443
申请日：2019-08-21
申请人： FLISOM AG
IPC分类号： H01L31/18 , H01L21/02 , H01L31/032 , H01L31/0749 , H01L31/0445 , H01L31/0224 , H01L31/0352 , H01L31/0392
摘要： A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
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