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公开(公告)号：US20200183024A1
公开(公告)日：2020-06-11
申请号：US16614948
申请日：2018-05-28
IPC分类号： G01T1/24 , G01T1/02 , H01J37/244
摘要： Provided are a radiation detector and a radiation detection apparatus in which the efficiency of detecting radiation is enhanced by increasing a portion capable of detecting radiation.A radiation detector (1) includes a semiconductor part (12) having a plate-like shape, the semiconductor part being provided with a through hole (11) penetrating the semiconductor part (12), one surface of the semiconductor part (12) being an incident surface (121) for radiation. The semiconductor part (12) has a sensitive portion (18) capable of detecting incident radiation, the sensitive portion (18) including an inner edge (122) of the incident surface (121).
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公开(公告)号：US20190011577A1
公开(公告)日：2019-01-10
申请号：US16028597
申请日：2018-07-06
发明人： Nicola ZORZI , Gabriele GIACOMINI , Giacomo BORGHI , Antonino PICCIOTTO , Francesco FICORELLA , Daisuke MATSUNAGA
IPC分类号： G01T1/24 , H01L31/115 , H01L31/08 , H01L31/0224
CPC分类号： G01T1/241 , G01T1/24 , G01T1/244 , H01L31/0224 , H01L31/085 , H01L31/115
摘要： A radiation detection element comprises: a semiconductor part generating an electric charge by entrance of radiation; a signal output electrode provided at the semiconductor part and outputting a signal caused by the electric charge; a potential gradient generation electrode provided at the semiconductor part, for applying voltage such that a potential gradient in which a potential varies toward the signal output electrode is generated inside the semiconductor part; a collection electrode provided at the semiconductor part, for collecting electric charges not derived from radiation; an insulating film provided on a side of the semiconductor part where the signal output electrode is located; and a conductive layer provided between the insulating film and a part of the semiconductor part, and having electric resistance lower than the electric resistance of the semiconductor part and higher than the electric resistance of the collection electrode. The conductive layer is located at a position where a distance from the signal output electrode is equal to or longer than a distance between the collection electrode and the signal output electrode.
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公开(公告)号：US20220093814A1
公开(公告)日：2022-03-24
申请号：US17422937
申请日：2020-01-27
申请人： HORIBA, LTD.
IPC分类号： H01L31/115 , H01L31/0203
摘要： The radiation detection element comprising a semiconductor part having a plate shape, a first electrode that is disposed on a first surface being one surface of the semiconductor part and that collects charges generated by incidence of radiation in the semiconductor part, a second electrode that is disposed on a second surface being the other surface of the semiconductor part and that is applied with voltage needed for collecting the charges, and a heavily-doped layer that is disposed at a region of the second surface excluding an edge of the semiconductor part and is doped heavier than the semiconductor part with dopants for making a type of a semiconductor equal to that of the semiconductor part. The heavily-doped layer is on the second surface located at a position overlapped with the second electrode and is thicker than the second electrode.
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