公开(公告)号：US20180145481A1

公开(公告)日：2018-05-24

申请号：US15736631

申请日：2016-03-09

申请人： FORSCHUNGSVERBUND BERLIN E.V.

发明人： Jörg FRICKE ,  Götz ERBERT ,  Paul CRUMP ,  Jonathan DECKER

IPC分类号： H01S5/12 ,  H01S5/026 ,  H01S5/20

CPC分类号： H01S5/1225 ,  H01S5/026 ,  H01S5/1221 ,  H01S5/1231 ,  H01S5/2086

摘要： Laser diode comprises an active layer; a waveguiding region at least partially surrounding the active layer; a rear facet; a front facet designed for decoupling laser radiation, wherein the active layer extends at least partially along a first axis (X) between the rear facet and the front facet; and a grid operatively connected to the waveguiding region, wherein the grid comprises a plurality of webs and trenches designed such that an average increase of a coupling parameter P for the plurality of trenches along the grid is non-zero, wherein the coupling parameter P of a trench is defined by the formula, wherein dres is a distance of the trench to the active layer, w is a width of the trench and Δn is the refractive index difference between a refractive index of the trench and a refractive index of a material surrounding the trench.

公开(公告)号：US20180019571A1

公开(公告)日：2018-01-18

申请号：US15551758

申请日：2016-02-18

申请人： FORSCHUNGSVERBUND BERLIN E.V.

发明人： Joerg FRICKE ,  Jonathan DECKER ,  Paul CRUMP ,  Goetz ERBERT

IPC分类号： H01S5/10 ,  H01S5/042 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/50

CPC分类号： H01S5/1064 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/1203 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/50

摘要： The invention relates to a laser diode (10) which has at least one active layer (12) which is arranged within a resonator (14) and is operatively connected to a outcoupling element (16), and further at least one contact layer (18) for coupling charge carriers into the active layer (12), wherein the resonator (14) comprises at least a first section (20) and a second section (22), wherein the second section (22) comprises a plurality of separate resistor elements (24) having a specific electrical resistivity greater than the specific electrical resistivity of the regions (26) between adjacent resistor elements (24), wherein a width (W3) of the resistor elements (24) along a longitudinal axis (X1) of the active layer (12) is less than 20 μm, and a projection of the resistor elements (24) on the active layer (12) along the first axis (Z1) overlap with at least 10% of the active layer (12).