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    Semiconductor devices for lasing applications and methods of manufacturing such devices
    1.
    发明授权
    Semiconductor devices for lasing applications and methods of manufacturing such devices 有权

    公开(公告)号：US11967801B2

    公开(公告)日：2024-04-23

    申请号：US17048498

    申请日：2019-03-28

    Applicant: NanoPro AB

    Inventor： Ahmad Abedin ,  Mikael Östling

    IPC: H01S5/30 ,  H01S5/20 ,  H01S5/32

    CPC classification number: H01S5/3027 ,  H01S5/2086 ,  H01S5/3223

    Abstract: A structure having first and second layers is disposed on a substrate. The second layer is disposed on the first layer, is compressively strained, and comprises the alloy including germanium and tin. The structure comprises first and second members spaced a distance from each other along a direction, a strip located between the first and second members and extending along an axis intersecting the direction, and arms connecting the first and second members to a first end of the strip. The first and second members, the strip and the arms comprise respective portions of the first and second layers. A portion of the first layer at the strip and arms is removed such that the strip and arms become suspended and the arms remain anchored to the first layer via the first and second members. Tensile strain is induced in the alloy via the arms. The alloy may perform lasing.

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    2.
    发明公开
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230216278A1

    公开(公告)日：2023-07-06

    申请号：US17569055

    申请日：2022-01-05

    Applicant: Modulight Oy

    Inventor： Riina Ulkuniemi ,  Ville Vilokkinen ,  Petri Melanen

    IPC: H01S5/227 ,  H01S5/22 ,  H01S5/20

    CPC classification number: H01S5/2272 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/2086

    Abstract: A method for fabricating a semiconductor device on a semiconductor substrate, wherein the semiconductor device is adapted to provide target lasing properties, the method includes creating, a mask layer over the semiconductor substrate, the mask layer having at least one opening to expose a region of the semiconductor substrate, etching using a first etching process the exposed region, utilizing inductively coupled plasma with preselected first set of parameters to obtain a baseline mesa profile, the baseline mesa profile having a baseline mesa angle, re-etching using a second etching process the etched region, utilizing inductively coupled plasma with preselected second set of parameters, to alter the baseline mesa profile to obtain a requisite mesa profile having a requisite mesa angle defined by the target lasing properties and the requisite mesa angle being different from the baseline mesa angle, removing the mask layer and defining a p-n junction for the semiconductor substrate.

    SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR
    7.
    发明申请
    SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR 审中-公开
    表面发射激光元件和原子振荡器

    公开(公告)号：US20170040771A1

    公开(公告)日：2017-02-09

    申请号：US15216834

    申请日：2016-07-22

    Applicant: Ryoichiro SUZUKI

    Inventor： Ryoichiro SUZUKI

    IPC: H01S5/068 ,  H03L7/26 ,  H01S5/343 ,  H01S5/187 ,  H01S5/183

    CPC classification number: H01S5/068 ,  H01S5/0042 ,  H01S5/183 ,  H01S5/18313 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/18377 ,  H01S5/187 ,  H01S5/2086 ,  H01S5/34313 ,  H01S5/34386 ,  H01S2301/163 ,  H01S2301/176 ,  H03L7/26

    Abstract: A surface emitting laser element includes a lower Bragg reflection mirror; an upper Bragg reflection mirror; and a resonator region formed between the lower Bragg reflection mirror and the upper Bragg reflection mirror, and including an active layer. A wavelength adjustment region is formed in the lower Bragg reflection mirror or the upper Bragg reflection mirror, and includes a second phase adjustment layer, a wavelength adjustment layer and a first phase adjustment layer, arranged in this order from a side where the resonator region is formed. An optical thickness of the wavelength adjustment region is approximately (2N+1)×λ/4, and the wavelength adjustment layer is formed at a position where an optical distance from an end of the wavelength adjustment region on the side of the resonator region is approximately M×λ/2, where λ is a wavelength of emitted light, M and N are positive integers, and M is N or less.

    Abstract translation: 表面发射激光元件包括下布拉格反射镜; 上布拉格反射镜; 以及形成在下布拉格反射镜和上布拉格反射镜之间并且包括有源层的谐振器区域。 波长调整区域形成在下布拉格反射镜或上布拉格反射镜中，并且包括第二相位调整层，波长调整层和第一相位调整层，其从谐振器区域为 形成。 波长调整区域的光学厚度大致为（2N + 1）×λ/ 4，波长调整层形成在从谐振器区域侧的波长调整区域的端部的光学距离为 大约M×λ/ 2，其中λ是发射光的波长，M和N是正整数，M是N或更小。

    SINGLE-MODE, DISTRIBUTED FEEDBACK INTERBAND CASCADE LASERS
    8.
    发明申请
    SINGLE-MODE, DISTRIBUTED FEEDBACK INTERBAND CASCADE LASERS 有权
    单模，分布式反馈INTERBAND CASCADE激光

    公开(公告)号：US20160049770A1

    公开(公告)日：2016-02-18

    申请号：US14824933

    申请日：2015-08-12

    Applicant: California Institute of Technology

    Inventor： Clifford F. Frez ,  Carl E. Borgentun ,  Ryan M. Briggs ,  Mahmood Bagheri ,  Siamak Forouhar

    IPC: H01S5/34 ,  H01S5/10 ,  H01S5/042 ,  H01S5/12 ,  H01S5/22

    CPC classification number: H01S5/3402 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/1231 ,  H01S5/1237 ,  H01S5/125 ,  H01S5/187 ,  H01S5/2086 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/3214 ,  H01S5/3401

    Abstract: Single-mode, distributed feedback interband cascade lasers (ICLs) using distributed-feedback gratings (e.g., lateral Bragg gratings) and methods of fabricating such ICLs are provided. The ICLs incorporate distributed-feedback gratings that are formed above the laser active region and adjacent the ridge waveguide (RWG) of the ICL. The ICLs may incorporate a double-ridge system comprising an optical confinement structure (e.g., a RWG) disposed above the laser active region that comprises the first ridge of the double ridge system, a DFB grating (e.g., lateral Bragg grating) disposed above the laser active region and adjacent the optical confinement structure, and an electric confinement structure that passes at least partially through the laser active region and that defines the boundary of the second ridge comprises and the termination of the DFB grating.

    Abstract translation: 提供了使用分布式反馈光栅（例如横向布拉格光栅）的单模，分布式反馈带间级联激光器（ICL）和制造这种ICL的方法。 ICL包含形成在激光有源区域上方并与ICL的脊波导（RWG）相邻的分布式反馈光栅。 ICL可以包括双脊系统，该双脊系统包括设置在激光有源区域之上的光限制结构（例如，RWG），其包括双脊系统的第一脊，DFB光栅（例如，横向布拉格光栅） 激光有源区并且邻近光限制结构，并且至少部分地穿过激光有源区并且限定第二脊的边界的电限制结构包括DFB光栅的终止和终止。

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