公开(公告)号：US20240348006A1

公开(公告)日：2024-10-17

申请号：US18753137

申请日：2024-06-25

Applicant: OpenLight Photonics, Inc.

Inventor： John Parker ,  Molly Piels ,  Hanxing Shi

IPC: H01S5/026 ,  G02B6/42 ,  H01S5/00 ,  H01S5/042 ,  H01S5/12

CPC classification number: H01S5/026 ,  G02B6/4266 ,  H01S5/0085 ,  H01S5/12 ,  H01S5/042

Abstract: A symmetric distributed feedback (DFB) laser that is integrated in a silicon based photonic integrated circuit can output light from both sides of the symmetric DFB laser onto waveguides. The light in the waveguides can be phase adjusted and combined using an optical coupler. The symmetric DFB laser can generate light and symmetrically output light onto different lanes of a multi-lane transmitter.

公开(公告)号：US12107393B2

公开(公告)日：2024-10-01

申请号：US18486776

申请日：2023-10-13

Applicant: Nuvoton Technology Corporation Japan

Inventor： Kazumasa Nagano ,  Hiroki Nagai

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/16 ,  H01S5/343 ,  H01S5/22 ,  H01S5/32

CPC classification number: H01S5/162 ,  H01S5/0021 ,  H01S5/0207 ,  H01S5/026 ,  H01S5/3434 ,  H01S5/0014 ,  H01S5/22 ,  H01S5/3202

Abstract: A semiconductor laser element that includes a semiconductor layer including a waveguide formed in an intra-layer direction of the semiconductor layer and a window region formed in a front-side end face of the waveguide, has a current-laser optical output characteristic in which, at an operating temperature of 25° C.±3° C., a laser optical output has a maximum value at a first driving current value and the laser optical output is at most 20% of the maximum value at a second driving current value greater than the first driving current value, and is not damaged at the second driving current value.

公开(公告)号：US20240291233A1

公开(公告)日：2024-08-29

申请号：US18573028

申请日：2021-07-01

Applicant: Nippon Telegraph and Telephone Corporation

Inventor： Suguru Yamaoka ,  Shinji Matsuo

IPC: H01S5/026 ,  H01S5/02 ,  H01S5/223

CPC classification number: H01S5/026 ,  H01S5/021 ,  H01S5/223

Abstract: A semiconductor optical device includes: a first cladding layer formed on a Si substrate; a core formed on the first cladding layer; and a second cladding layer formed on the first cladding layer to cover the core. A lower cladding layer including SiO2 or the like is formed on (a front surface of) the Si substrate, and the first cladding layer is formed on the lower cladding layer. The first cladding layer includes a material having thermal conductivity higher than thermal conductivity of a direct transition type semiconductor. A refractive index of the first cladding layer is higher than that of the second cladding layer and lower than that of the core. In an optical coupling region of an optical waveguide by the core, a cross-sectional shape of the core is in a state in which a substrate radiation mode appears.

公开(公告)号：US12068575B2

公开(公告)日：2024-08-20

申请号：US17241584

申请日：2021-04-27

Applicant: PHOSERTEK CORPORATION

Inventor： Yu-Chen Chen ,  Chien-Hung Lin ,  Bo-Tsun Chou ,  Chih-Yuan Weng ,  Kuo-Jui Lin

IPC: H01S5/026 ,  H01S5/042 ,  H01S5/11 ,  H01S5/183 ,  H01S5/343

CPC classification number: H01S5/026 ,  H01S5/04256 ,  H01S5/11 ,  H01S5/18361 ,  H01S5/343

Abstract: A laser device includes a substrate, a first waveguiding layer, an active layer, a second waveguiding layer, a contact layer, an insulating layer, a light-transmissive conducting layer, a first electrode, and a second electrode. The first waveguiding layer, the active layer, the second waveguiding layer, and the contact layer form an epitaxy structure having a first platform and a second platform. The first platform has multiple holes to form a photonic crystal structure. The insulating layer is over an upper surface and a sidewall surface of the first platform, and over an upper surface of the second platform. The sidewall surface passes through the contact layer, the second waveguiding layer, and the active layer. The light-transmissive conducting layer connects to the photonic crystal structure through an aperture of the insulating layer. The first electrode has an opening corresponding to the aperture. The second electrode is under the substrate.

公开(公告)号：US20240272461A1

公开(公告)日：2024-08-15

申请号：US18643993

申请日：2024-04-23

Applicant: SMART PHOTONICS HOLDING B.V.

Inventor： Rastko PAJKOVIC ,  Erwin Antonius Josephus Maria BENTE ,  Stefanos ANDREOU ,  Theodorus Thomas Marinus VAN SCHAIJK

IPC: G02F1/025 ,  A61B5/055 ,  A61B6/03 ,  A61B6/50 ,  A61K45/06 ,  A61N2/00 ,  A61N2/02 ,  G02B6/122 ,  H01S5/026

CPC classification number: G02F1/025 ,  A61N2/02 ,  G02B6/122 ,  H01S5/026 ,  A61B5/055 ,  A61B6/032 ,  A61B6/037 ,  A61B6/50 ,  A61K45/06 ,  A61N2/002 ,  A61N2/004

Abstract: A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the waveguide layer, and a contact layer for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact. Corresponding methods of operation of such a photonic integrated circuit are also presented herein.

公开(公告)号：US12051885B2

公开(公告)日：2024-07-30

申请号：US17415014

申请日：2019-12-26

Applicant: ADVANCED MICRO FOUNDRY PTE. LTD.

Inventor： Feng Gao ,  Lianxi Jia ,  Guo Qiang Patrick Lo

IPC: H01S5/12 ,  H01S5/02 ,  H01S5/026 ,  H01S5/042 ,  H01S5/06

CPC classification number: H01S5/1228 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/026 ,  H01S5/04253 ,  H01S5/0612 ,  H01S5/12

Abstract: A distributed feedback laser integrated on silicon comprising a combination of a waveguide of a first material and a laser diode a second material, different from the first material, wherein the laser diode comprises a plurality of regularly spaced metalized grating elements which form a single longitudinal mode; wherein the waveguide comprises a plurality of waveguide elements separated by metalized regions; and wherein the metalized grating elements and the metalized regions are adapted to be coupled to one another to form the distributed feedback laser.

公开(公告)号：US12051883B2

公开(公告)日：2024-07-30

申请号：US17787976

申请日：2020-12-23

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi Hirose ,  Yoshitaka Kurosaka ,  Soh Uenoyama

IPC: G02F1/015 ,  G02F1/025 ,  H01S5/00 ,  H01S5/026 ,  H01S5/11 ,  H01S5/185 ,  H01S5/18

CPC classification number: H01S5/0085 ,  G02F1/0151 ,  G02F1/025 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/11 ,  H01S5/185 ,  G02F2201/12 ,  H01S5/18

Abstract: This disclosure relates to a spatial light modulator, etc., the spatial light modulator being capable of dynamically controlling the phase distribution of light, and provided with a structure having a smaller pixel arrangement period and suitable for high-speed operation. The spatial light modulator includes a substrate. The substrate has a front surface, a back surface, and through-holes arranged one-dimensionally or two-dimensionally and penetrating between the front surface and the back surface. The spatial light modulator further includes layered structures each covering the inner walls of the through-holes. Each layered structure includes a first electroconductive layer on the inner wall, a dielectric layer on the first electroconductive layer and having optical transparency, and a second electroconductive layer on the dielectric layer and having optical transparency. At least one of the first and second electroconductive layers is electrically isolated for each group including one or more through-holes.

公开(公告)号：US12034276B2

公开(公告)日：2024-07-09

申请号：US17938817

申请日：2022-10-07

Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Arkadiy Lyakh ,  Matthew Suttinger

IPC: H01S5/34 ,  H01S5/026 ,  H01S5/20 ,  H01S5/22

CPC classification number: H01S5/3402 ,  H01S5/026 ,  H01S5/20 ,  H01S5/22

Abstract: A QCL may include a substrate, and a sequence of semiconductor epitaxial layers adjacent the substrate and defining an active region, an injector region adjacent the active region, and a waveguide optically coupled to the active region. The active region may include stages, each stage having an upper laser level and a lower laser level defining respective first and second wave functions. The upper laser level may have an upper laser level average coordinate, and the lower laser level may have a lower laser level average coordinate. The upper laser level average coordinate and the lower laser level average coordinate may have spacing of less than 10 nm. Wave functions for all active region energy levels located below the lower laser level may have greater than 10% overlap with the injector region.

公开(公告)号：US12007632B2

公开(公告)日：2024-06-11

申请号：US17594582

申请日：2020-04-01

Applicant: KYOCERA Corporation

Inventor： Hiromichi Yoshikawa ,  Naoki Matsui ,  Tomoya Sugita

IPC: G02F1/095 ,  G02B6/27 ,  H01S5/0239 ,  H01S5/026

CPC classification number: G02F1/0955 ,  G02B6/2746 ,  H01S5/0239 ,  H01S5/026

Abstract: An optical isolator 10 according to the present disclosure includes a substrate 11 and an optical waveguide 12 provided on the substrate 11. The optical waveguide 12 includes a first end part 13, a plurality of second end parts 14 arranged in an array, and at least one branching part 18 located between the first end part 13 and the plurality of second end parts 14. The optical waveguide 12 has a portion having non-reciprocity and gives different non-reciprocal phase shift amounts between the first end part 13 and at least two of the second end parts 14.

公开(公告)号：US11992694B2

公开(公告)日：2024-05-28

申请号：US17395771

申请日：2021-08-06

Applicant: SMART PHOTONICS HOLDING B.V.

Inventor： Rastko Pajkovic ,  Erwin Antonius Josephus Maria Bente ,  Stefanos Andreou ,  Theodorus Thomas Marinus Van Schaijk

IPC: A61N2/00 ,  A61K45/06 ,  A61N2/02 ,  G02B6/122 ,  G02F1/025 ,  H01S5/026 ,  A61B5/055 ,  A61B6/00 ,  A61B6/03 ,  A61B6/50

CPC classification number: A61N2/004 ,  A61K45/06 ,  A61N2/002 ,  A61N2/02 ,  G02B6/122 ,  G02F1/025 ,  H01S5/026 ,  A61B5/055 ,  A61B6/032 ,  A61B6/037 ,  A61B6/50

Abstract: A photonic integrated circuit, PIC, comprising a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming a PIN or PN doping structure, the PIC comprising a waveguide arranged for conducting light waves; an optical element connected to the waveguide, wherein the optical element, in operation, is in reverse-bias mode, and wherein the optical element comprises a contact layer arranged for connecting to a voltage source; wherein the waveguide comprises conducting contacts proximal to the optical element, and wherein the PIC further comprises at least one isolation section arranged in between the optical element and the conducting contacts. Corresponding methods of operation of such a PIC are also presented herein.