公开(公告)号：US20030226834A1

公开(公告)日：2003-12-11

申请号：US10456741

申请日：2003-06-09

申请人： FUJI PHOTO FILM CO., LTD. & FUJI PHOTO OPTICAL CO., LTD.

发明人： Hiromi Ishikawa ,  Akinori Harada ,  Kazuhiko Nagano ,  Yoji Okazaki ,  Takeshi Fujii ,  Hideo Yamanaka ,  Hiromitsu Yamakawa

IPC分类号： B23K026/00 ,  H01L021/00 ,  H01L021/84

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  C23C14/28 ,  C23C16/483

摘要： A laser annealer has a laser light source with at least one GaN-type semiconductor laser and is configured so as to form emission points that emit laser beams having a wavelength of 350 to 450 nm, and a scanning device for scanning an annealing surface with the laser beams. The laser annealer may have a spatial light modulator for modulating the laser beams, and in which pixel portions whose light modulating states change in accordance with control signals are arranged on a substrate. The invention is applied to a laser thin-film forming apparatus. The apparatus has a laser source that has at least one semiconductor laser and is configured so as to form emission points, and an optical system for focusing laser beams into a single beam in the width direction of a substrate.

摘要翻译： 激光退火炉具有具有至少一个GaN型半导体激光器的激光光源，并且被配置为形成发射波长为350至450nm的激光束的发射点，以及用于扫描退火表面的扫描装置 激光束。 激光退火炉可以具有用于调制激光束的空间光调制器，并且其中光调制状态根据控制信号改变的像素部分被布置在基板上。 本发明应用于激光薄膜形成装置。 该装置具有至少一个半导体激光器并且被配置为形成发射点的激光源，以及用于将激光束在基板的宽度方向上聚焦成单个光束的光学系统。