MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    1.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号:US20140322893A1

    公开(公告)日:2014-10-30

    申请号:US14324626

    申请日:2014-07-07

    Abstract: A method for manufacturing a semiconductor device with a treated member, includes: subjecting an adhesive support having a substrate and an adhesive layer capable of increasing or decreasing in adhesiveness upon irradiation with an actinic ray, radiation or heat to irradiation of the adhesive layer with an actinic ray, radiation or heat, adhering a first surface of a to-be-treated member to the adhesive layer of the adhesive support, applying a mechanical or chemical treatment to a second surface different from the first surface of the to-be-treated member to obtain a treated member, and detaching a first surface of the treated member from the adhesive layer of the adhesive support, wherein the irradiation of the adhesive layer with an actinic ray, radiation or heat is conducted so that adhesiveness decreases toward an outer surface from an inner surface on the substrate side of the adhesive layer.

    Abstract translation: 一种用于制造具有处理部件的半导体器件的方法,包括:对具有基底的粘合剂支撑体和能够增加或降低粘合性的粘合剂层进行照射时的光化射线,辐射或加热以对所述粘合剂层进行照射 光化射线,辐射或热,将待处理部件的第一表面粘附到粘合剂支撑体的粘合剂层上,对不同于被处理物体的第一表面的第二表面进行机械或化学处理 构件,以获得处理构件,并且从粘合剂支撑体的粘合剂层分离处理构件的第一表面,其中进行具有光化射线,辐射或热的粘合剂层的照射,使得粘附性朝向外表面减小 从粘合剂层的基板侧的内表面。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    3.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的制造方法

    公开(公告)号:US20140318697A1

    公开(公告)日:2014-10-30

    申请号:US14328191

    申请日:2014-07-10

    Abstract: A method for manufacturing a semiconductor device with a treated member, includes: subjecting an adhesive support having a substrate and an adhesive layer capable of increasing or decreasing in adhesiveness upon irradiation with an actinic ray or radiation to pattern exposure of the adhesive layer to provide a high adhesive region and a low adhesive region in the adhesive layer, adhering a first surface of a to-be-treated member to the adhesive layer of the adhesive support, applying a mechanical or chemical treatment to a second surface different from the first surface of the to-be-treated member to obtain a treated member, and detaching the first surface of the treated member from the adhesive layer of the adhesive support.

    Abstract translation: 一种用于制造具有处理部件的半导体器件的方法,包括:对具有基底的粘合剂支撑体和能够增加或降低粘附性的粘合剂层进行照射时,用光化射线或辐射照射粘合剂层以图案曝光, 高粘合剂区域和粘合剂层中的低粘合剂区域,将被处理构件的第一表面粘附到粘合剂支撑体的粘合剂层上,对不同于第一表面的第二表面施加机械或化学处理 待处理的构件以获得处理的构件,并且将所处理的构件的第一表面从粘合剂支撑体的粘合剂层分离。

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