公开(公告)号：US20130236837A1

公开(公告)日：2013-09-12

申请号：US13852641

申请日：2013-03-28

Applicant: FUJIFILM CORPORATION

Inventor： Soichiro HONDA ,  Tadashi OMATSU ,  Hideaki TSUBAKI

IPC: G03F7/20 ,  G03F7/26

CPC classification number: G03F7/20 ,  G03F7/0392 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/16 ,  G03F7/26 ,  G11B5/855

Abstract: Collapse of resist patterns in the formation of resist patterns that employ chemically amplified resist material is suppressed. A method for forming a resist pattern includes the steps of: coating a substrate with a chemically amplified resist material; exposing the resist material; and developing the exposed resist material, to form a resist pattern having an aspect ratio AR of 1.5 or greater in a resist film formed by the resist material. A close contact process that improves close contact properties between the substrate and the resist film is controlled such that the thickness of residual film of the resist film is greater than or equal to 1 nm and less than or equal to 1.83·AR+1.73 nm.

Abstract translation: 抑制了使用化学放大抗蚀剂材料的抗蚀剂图案的形成中的抗蚀剂图案的崩溃。 形成抗蚀剂图案的方法包括以下步骤：用化学放大的抗蚀剂材料涂覆基材; 曝光抗蚀材料; 并使曝光的抗蚀剂材料显影，以形成抗蚀剂材料形成的抗蚀剂膜中的纵横比AR为1.5以上的抗蚀剂图案。 控制提高基板和抗蚀剂膜之间的紧密接触性能的紧密接触处理，使得抗蚀剂膜的残留膜的厚度大于或等于1nm且小于或等于1.83A·AR + 1.73nm。